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I-V curves of Schottky diodes are simulated for a Gaussian type of the Schottky barrier height (SBH) distribution using the model of noninteracting parallel diodes. The mean value and the standard deviation of the distribution are supposed to be constant, i.e., not dependent on the voltage and the temperature. The influence of the distribution parameters and the temperature on the apparent barrier height and the ideality factor is analyzed. It is shown that the ideality factor increases and the apparent barrier height decreases with increasing standard deviation and decreasing temperature. The simulation also provides a rough estimate for the standard deviation. Values of ∼0.09 V can result in ideality factors up to 1.2. The importance of the effect of series resistance in the approach of noninteracting diodes is emphasized.

Surface plasmon resonance of gold and silver nanoparticle (NP) layers is investigated by the experiment as well as simulations. Although the good agreement was found for gold NP film, a significant mismatch in the resonance energy for silver NP film was observed. The deviation was assigned to the presence of silver oxide (Ag2O) in silver NPs. As an alternative to the NP size-dependent Drude model, the analysis based on effective medium approximation for refractive index of Ag-Ag2O material system is carried out and compared with the core-shell model. Both Mie's model and numerical simulation results illustrate shift of the surface plasmon resonance due to silver NP surface oxidation.