Kinetic expression and study of the growth rate of mismatched structures grown by hydride vapour phase epitaxy

Gil‐Lafon, E.; Piffault, N.; Cadoret, R.

doi:10.1016/0022-0248(95)00023-2

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Cited by 5 publications

(2 citation statements)

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“…The control of the extraneous deposit was studied versus the HCl added in the main nitrogen flow at constant total flow, noted HCl add , to decrease the supersaturation in the mixing zone. This method had been very effective for growing InP [4], GaInAs [5,6] or GaAs [1,7]. In order to have supersaturation high enough to obtain growth, the HCl flow on the liquid gallium is fixed to 30 sccm mixed with 73 sccm of …”

Section: Resultsmentioning

confidence: 99%

Experimental and Theoretical Study of the Growth of GaN on Sapphire by HVPE

Trassoudaine

Aujol

Disseix

et al. 1999

phys. stat. sol. (a)

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Section: Resultsmentioning

confidence: 99%

Experimental and Theoretical Study of the Growth of GaN on Sapphire by HVPE

Trassoudaine

Aujol

Disseix

et al. 1999

phys. stat. sol. (a)

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“…The additional HCl was used for the control of the extraneous deposit in order to decrease the supersaturation in the mixing zone [7,8]. Generally, the surface reactions are important for the thin film growth [9].…”

Section: Discussionmentioning

confidence: 99%

Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE

Xiu

Zhang

et al. 2001

MRS Proc.

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The effect of introduction of additional HCl on the surface morphology and structural properties of hydride vapor phase epitaxy grown GaN during growth is investigated, and high quality GaN with smooth surface on sapphire is obtained by adding the additional HCl into the HVPE reactor. The result is attributed to the control of polarity of GaN films during growth. The additional HCl altered the equilibrium at the GaN growth front, and the reversible reaction decreased the nucleation density or growth rate. Further, lower growth rate promote the surface diffusion and the coalescence over (0001) plane. Additional HCl may improve the surface morphology by suppressing the (000-1) polarity growth in the initial stage of the growth.

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