Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

Schulte, Kevin L.; Garrod, T.; Kim, Tae Wan; Kirch, Jeremy; Ruder, Steven; Mawst, Luke J.; Kuech, T. F.

doi:10.1016/j.jcrysgro.2012.08.053

Cited by 20 publications

(30 citation statements)

References 45 publications

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“…The growth rate typically decreased with increasing P InCl , indicating that the growth was kinetically limited [3]. A thick, constant composition capping layer was grown at the final P InCl after compositional grading by either method.…”

Section: Methodsmentioning

confidence: 99%

“…(004) and (115) reflections were utilized to determine the composition and strain of the final, thick capping layer in each sample. The relaxation of the intermediate steps was assumed to be nearly 100% as observed previously [3].…”

Section: Methodsmentioning

confidence: 99%

“…In x Ga 1 À x As metamorphic buffer layers (MBLs) with tunable lattice constants can be used in device applications where a lattice parameter between GaAs and InP or between InP and InAs is desired. Recently they have garnered interest as a potential route to low strain mid-IR laser devices emitting in the 3.0-4.0 μm range [3,4]. Growth of these devices is quite sensitive to the orientation of the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

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Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy

Schulte

Strand

Kuech

2015

Journal of Crystal Growth

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a b s t r a c tTilt behavior in thick In x Ga 1 À x As metamorphic buffer layers (MBLs) grown by hydride vapor phase epitaxy (HVPE) was measured by high-resolution reciprocal space mapping.Step-graded and continuously-graded structures, grown on nominally (001) oriented GaAs substrates, were analyzed. Tilt was measured as a function of position in a step-graded MBL. It was found that the tilt was strongest near the edges and tended to point toward the sample center.Step-grading induced a nearly linear tilt increase with x InAs , while tilt increased slowly below x InAs $ 0.10 then increased more sharply with In concentration in continuously-graded samples. The tilt behavior could be described by a model in which the tilt is attributed to imbalances in dislocations that result from cross-slip within a glide length of the sample edge. This finding implies that dislocation multiplication by cross slip is an important strain relief mechanism during the growth of these MBLs. Strategies for minimizing tilt in HVPE MBLs are discussed.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy

Schulte

Strand

Kuech

2015

Journal of Crystal Growth

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“…$ 15 μm thickness is grown on the top, commonly referred to as the cap layer [5]. The buffer structure allows the formation of misfit dislocations as a means to relieve film stress while minimizing threading dislocations.…”

Section: Methodsmentioning

confidence: 99%

Regrowth of quantum cascade laser active regions on metamorphic buffer layers

Rajeev

Mawst

Kirch

et al. 2016

Journal of Crystal Growth

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Communicated by T. PaskovaKeywords: A3. Superlattice B3. Quantum cascade lasers A3. Metalorganic vapor phase epitaxy B2. Semiconducting III-V materials a b s t r a c t Metamorphic buffer layers (MBLs) were used as substrates with lattice constants selected for designing and fabricating intersubband transition sources involving strained superlattices (SLs) such as Quantum Cascade Lasers (QCLs). Chemical mechanical planarization (CMP) was used to prepare the InGaAs-based MBLs for epitaxial growth. Indium enrichment of the InGaAs layer on the MBL surfaces was observed when annealed at the regrowth temperatures. This post-anneal enhancement was eliminated by including a wet-etch treatment after CMP, which results in an epi-ready surface for regrowth. Ten stages of a QCL core region structure, designed for emission at a 3.4 μm wavelength are regrown on a surfaceoptimized MBL. Such structures exhibit well defined X-ray diffraction pendellösung fringes, and transmission electron microscopy confirms planar superlattice interfaces with layer thicknesses that are in good agreement with the design target.

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“…This enabled a high-crystal quality In 0.5 Ga 0.5 As on a GaAs substrate. Consequently, the whole buffer thickness (In x Ga 1−x As/In 0.3 Ga 0.7 A/In x Ga 1-x As) was reduced to 2.3 μm, which offered a scalability greatly superior to the forefront studies where 5 ∼ 10 μm were mostly seen in MOCVD [22][23][24]. Finally, the performances of the MOSCAP with designed buffer structure were tested, and its electrical versatilities were clearly revealed.…”

Section: Introductionmentioning

confidence: 99%

Control of metamorphic buffer structure and device performance of In_xGa_1−xAs epitaxial layers fabricated by metal organic chemical vapor deposition

Nguyễn¹,

Yu²,

Tang³

et al. 2014

Nanotechnology

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Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

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Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

Cited by 20 publications

References 45 publications

Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy

Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy

Regrowth of quantum cascade laser active regions on metamorphic buffer layers

Control of metamorphic buffer structure and device performance of In_xGa_1−xAs epitaxial layers fabricated by metal organic chemical vapor deposition

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Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

Cited by 20 publications

References 45 publications

Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy

Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy

Regrowth of quantum cascade laser active regions on metamorphic buffer layers

Control of metamorphic buffer structure and device performance of InxGa1−xAs epitaxial layers fabricated by metal organic chemical vapor deposition

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Product

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About

Control of metamorphic buffer structure and device performance of In_xGa_1−xAs epitaxial layers fabricated by metal organic chemical vapor deposition