The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition (MOCVD), with Mn implanted in 150 KeV, which can offer many distinguished advantages compared with other doping methods. A new energy band with a minimum at 2.9 eV in the reflectance spectra has been observed. The yellow band emission was greatly decreased according to the result of photoluminescence. The structure analysis revealed that the Mn doped sample has good crystal quality as the pure GaN after annealed. And further discussions on the role of Mn in GaN: Mn films have been presented.
We have investigated the dry oxidation behavior of an AlN epilayer on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD) at different temperatures and different oxidation times through XRD analysis and scanning electron microscopy (SEM). The AlN epilayer has been completely oxidized into polycrystalline α- Al 2 O 3 after oxidation at 1100°C for 2 h. The ratio of O 2 to N 2 introduced into the furnace has an influence on the structure of α- Al 2 O 3. There are only α- Al 2 O 3 (104), (113) diffraction peaks in the XRD curve if the O 2: N 2 is lower than 0.2:1. At the temperature over 1100°C, the oxidation is initiated with a rapid oxidation process, followed by a relatively slow process. These two oxidation stages are respectively related to the interfacial reaction mechanism and the diffusion mechanism.
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