Study of Dry Oxidation of Aluminum Nitride on Si(111) Substrate Grown by Metalorganic Chemical Vapor Deposition

Abstract

We have investigated the dry oxidation behavior of an AlN epilayer on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD) at different temperatures and different oxidation times through XRD analysis and scanning electron microscopy (SEM). The AlN epilayer has been completely oxidized into polycrystalline α- Al 2 O 3 after oxidation at 1100°C for 2 h. The ratio of O 2 to N 2 introduced into the furnace has an influence on the structure of α- Al 2 O 3. There are only α- Al 2 O 3 (104), (113) diffraction peaks in the XRD curve if the O 2: N 2 is lower than 0.2:1. At the temperature over 1100°C, the oxidation is initiated with a rapid oxidation process, followed by a relatively slow process. These two oxidation stages are respectively related to the interfacial reaction mechanism and the diffusion mechanism.

Thermal stability of AlN films prepared by ion beam assisted deposition

“…Aluminum nitride will transform to Al 2 O 3 at high temperature under oxidizing atmosphere. Most of investigations have focused on the oxidation behavior of the bulk or powder form material [10][11][12][13], and a few for the thin film material [14][15][16][17][18]. However, there is little report on the effect of both the temperature and oxidizing atmosphere on the optical property of AlN film.…”

Oxidation behavior of AlN films at high temperature under controlled atmosphere

“…9,10 ] form; only a few of them considered the thin film material. [11][12][13][14] Among these studies focusing on thin films, only the environment of pure oxygen, air, or N 2 /O 2 mixing gases but with a very small oxygen partial pressure range 14 has been considered. So far there is a lack of systematic studies on oxidation of AlN films under different atmospheres possessing, especially very different nitrogen and oxygen partial pressures.…”

High temperature properties of AlN coatings deposited by chemical vapor deposition for solar central receivers

“…Mass gains are relatively high during the first hours and then slow down. There are few data concerning the oxidation of AlN coatings or thin films [15,17,[40][41][42][43]. We expect that AlN plays two roles firstly as an oxygen sink that reacts to alumina and secondly as a better absorbing layer than metallic alloys.…”