Thermal stability of AlN films prepared by ion beam assisted deposition

Meng, Jian; Liu, Xiaopeng; Fu, Zhiqiang; Wang, Xiaojing; Lei, Hao

doi:10.1016/j.apsusc.2015.03.120

Cited by 14 publications

(8 citation statements)

References 32 publications

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“…3(a) has confirmed the presence of additional compound, peak b can be associated with the presence of this additional compound. The BEs of Al2p observed here were within the reported BE for Al 3+ (Supplementary 2(a)) and the BEs of N1s were also consistent with the reported BE for N 3− in AlN (Supplementary 2(b)) [26][27][28] . However, the spectra of Al2p and N1s did not exhibit significant changes upon introduction of Si, except for a slight shift in BE of Al2p and N1s when Si addition is high (19 at.%).…”

Section: Effect Of Si Addition As Single Dopant On the Crystal Structsupporting

confidence: 91%

“…7(a)) suggested the presence of an additional compound (*), these additional doublets are believed to correspond with the presence of this additional compound. However, changes in Mg to Si ratio does not seem to significantly affect the BEs of Al2p and N1s, since they are in close agreement with the observed BE for Al 3+ in AlN (Supplementary 6(a)) [26][27][28] and for N 3in AlN, respectively (Supplementary 6(b)) [26][27][28] . However, the width of N1s spectra is slightly affected by Mg/Si ratio, which might be correlate with the presence of multiple nitride compounds in the thin films, as have been also indicated by Mg2p and Si2p spectra.…”

Section: Elucidation On Mechanism Of Polarity Inversion -Effect Of Sisupporting

confidence: 78%

See 1 more Smart Citation

Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

Anggraini

Uehara

Hirata

et al. 2020

Sci Rep

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polarity is among the critical characteristics that could governs the functionality of piezoelectric materials. In this study, the polarity of aluminum nitride (AlN) thin films was inverted from Al-polar to N-polar by doping Si into AlN in the range of 1-15 at.%. Polarity inversion from Al-polar to N-polar also occurred when MgSi was codoped into AlN with Mg to Si ratio was less than 1. However, the polarity can be reversed from N-polar to Al-polar when the ratio of Mg and Si was greater than 1. The effect of Si and MgSi addition was investigated with regards to their crystal structure, lattice parameters, polarity distribution and the oxidation state of each elements. Furthermore, the effect of intermediate layer as well as the presence of point defect (i.e. aluminum vacancy) were investigated and how these factors influence the polarity of the thin films are discussed in this report.Wurtzite structure aluminum nitride (AlN) is one of the important building blocks for various advanced electromechanical and optoelectronics devices. AlN has been touted as a promising material for radio frequency (RF) acoustic devices such as resonators, due to its high acoustic velocity, high quality (Q) factor, thermal stability and the compatibility with CMOS technology 1 . With the ever-growing market of wireless telecommunication devices, the need to continuously enhance the piezoelectric property of AlN has made it the subject of extensive study and research.Improving the piezoelectric properties of AlN can be done by either augmenting the magnitude of piezoelectric response along c-axis (d 33 ) or by controlling the polarity of the thin film. Since the non-centrosymmetry of wurtzite AlN is the origin of polarization along the c-axis, a highly c-oriented AlN thin film could exhibits either Al-or N-polarity 2 . While considerable efforts have been devoted to find the best dopants that could produce the highest enhancement in the piezoelectric response 3-5 , manipulating the polarity of AlN is equally essential in designing high performance devices, since having thin film with different polarity could lead to different electronic property and eventually alter the performance of the developed device 2,6-8 . For example, having a stack of N-polar layer on top of an Al-polar layer enabled a solidly mounted resonator BAW (SMR-BAW) to operate at higher frequency which made it capable to function in more advance telecommunication technology 2,6 .When it comes to controlling the polarity, there are numbers of efforts that have been reported to successfully switch the polarity of nitride thin films from metal-polar into N-polar or vice versa 1,8-12 . The insertion of a buffer layer or an intermediate layer is one of the common approaches that was utilized to inverse the polarity [8][9][10]13,14 . Aside from this, switching the polarity can also be done by altering the thin film deposition parameters (e.g. pressure or target power), inserting metal seed or by introducing oxygen during thin film deposition 12,15-17 . However, these metho...

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Section: Effect Of Si Addition As Single Dopant On the Crystal Structsupporting

confidence: 91%

Section: Elucidation On Mechanism Of Polarity Inversion -Effect Of Sisupporting

confidence: 78%

Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

Anggraini

Uehara

Hirata

et al. 2020

Sci Rep

View full text Add to dashboard Cite

show abstract

“…1), the alternating Ag and AlN layers progressively roughen towards the surface, resulting in a significant number of defects, voids and grain boundaries within the Ag/AlN NML, which may act as defective channels for fast inward diffusion of oxygen species during annealing in air. [46][47][48] Hence, annealing of the Ag/AlN NML at ambient pressures probably not only induces oxidation of the top (i.e. surface-adjacent) AlN layer, but also of AlN barrier layers at larger depths below the surface.…”

Section: Chemical Driving Force: the Role Of Oxygen In Ag/aln Thermalmentioning

confidence: 99%

Massive Ag migration through metal/ceramic nano-multilayers: an interplay between temperature, stress-relaxation and oxygen-enhanced mass transport

et al. 2016

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“…Both peaks are located at ~396.8 eV which is the energy widely attributed to Al-N bond [9,17,[31][32][33]. The subpeak at ~400 eV is ascribed to C-NH2 bonds (Figure 7).…”

Section: X-ray Photoelectron Spectroscopy (Xps) Datamentioning

confidence: 96%

“…Being such an attractive semi-conductive material, it is well expected for there to be a plethora of studies and reports featuring AlN deposited by a variety of multiple tools (magnetron sputtering, ion-beam deposition, metalorganic vapor-phase epitaxy etc.) [7][8][9][10][11]. This particular paper focuses on the atomic layer deposition (ALD) method.…”

Section: Introductionmentioning

confidence: 99%

Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum

et al. 2020

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The aim of this study is motivated by the pursuit to investigate the performance of new and as yet untested precursors such as hydrazinium chloride (N2H5Cl) and triisobutylaluminum Al(C4H9)3 in the AlN atomic layer deposition (ALD) process as well as to study effects of successive annealing on the quality of the resulting layer. Both precursors are significantly cheaper than their conventional counterparts while also being widely available and can boast easy handling. Furthermore, Al(C4H9)3 being a rather large molecule might promote steric hindrance and prevent formation of undesired hydrogen bonds. Chemical analysis is provided by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS) techniques; surface morphology was studied using atomic force microscopy (AFM). Chlorine containing precursors such as AlCl3 are usually avoided in ALD process due to the risk of chamber contamination. However, experimental data of this study demonstrated that the use of N2H5Cl does not result in chlorine contamination due to the fact that temperature needed for HCl molecules to become reactive cannot be reached within the AlN ALD window (200–350 °C). No amount of chlorine was detected even by the most sensitive techniques such as SIMS, meaning it is fully removed out of the chamber during purge stages. A part of the obtained samples was subjected to annealing (1350 °C) to study effects of high-temperature processing in nitrogen atmosphere, the comparisons with unprocessed samples are provided.

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Thermal stability of AlN films prepared by ion beam assisted deposition

Cited by 14 publications

References 32 publications

Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants

Massive Ag migration through metal/ceramic nano-multilayers: an interplay between temperature, stress-relaxation and oxygen-enhanced mass transport

Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum

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