Research on the Mn-implanted GaN with ferromagnetism at room temperature

Xu, Jie; Li, J.; Zhang, R.; Xiu, Xiangqian; Lu, Dujuan; Yu, Hai; Gu, Shulin; Shen, Bo; Shi, Yi; Ye, Y.D.; Zheng, Yi

doi:10.1016/s0925-3467(03)00079-x

“…GaMnN reported in the literature, in addition to the single crystal form, has had the form of microcrystalline grains [60,61], nanowires [62][63][64][65][66] or crystalline thin films. Thin films of GaMnN have been prepared through molecular-beam epitaxy (MBE) [55,[67][68][69][70][71][72][73][74][75][76][77][78][79][80][81][82][83] with a wide spread of substrate temperatures, deposition and annealing of a Mn-layer onto a GaN film [84,85], nebulised spray pyrolysis [86], metal organic chemical vapour deposition (MOCVD) [87,88], pulsed laser deposition (PLD) [89], Mn + [66,88,[90][91][92][93][94][95][96] or Mn + and N + [97] ion implantation into already-prepared GaN films. GaMnN has also been grown co-doped with a number of different elements [54,82,[98]…”

Section: Gamnn Preparation and Structurementioning

confidence: 99%

“…Mn-implanted GaN films show a large number of midgap energy levels, likely related to transitions involving extensive types of implantation-induced defects such as N or Ga vacancies and Ga interstitials [153]. Red-and blue-shifts of the bandgap in Mn implanted or PLD films of ∼30 meV have both been seen [66,89], and are well correlated with a respective increase or decrease of the lattice parameter [95,109]. Numerous other optical characterisation studies exist that explore the energies of transitions involving intrinsic donor and acceptor levels, excitons or levels associated with dopants such as Mg and Si [80,103].…”

Section: Optical Properties and Mn Impurity Level Positionsmentioning

confidence: 99%

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

Granville¹

1

0

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<p>Materials that combine the useful properties of magnetic and semiconducting behaviours are sought for new and developing applications in electronics. In this thesis experimental studies of the properties of disordered thin films of several potentially magnetic semiconducting materials are presented. Previous research on the diluted magnetic semiconductor GaMnN is reviewed as an introduction to a study of GaMnN thin films grown with an ion-assisted deposition technique. Several complementary compositional and structural analysis techniques are used to determine that films can be grown with as much as 18 at. % Mn content and that contain no impurity phases, as are often detected in single crystalline GaMnN preparations with high Mn concentrations. The effects of varying Mn contents on the resistive, optical and magnetic properties of the thin films are investigated. The structural, electronic and magnetic properties of thin films of the potential impurity phase MnN have also been investigated and compared with band structure calculations. Recent predictions that the rare earth nitrides may have extremely useful electronic properties have been almost untested in the literature. A procedure for growing rare earth nitride thin films and capping them to protect from reaction with water vapour allows their resistivity, structural and magnetic properties to be established. The results on GdN, SmN, ErN and DyN support the recent predictions, and a more thorough study on GdN reveals that this material is a ferromagnetic semiconductor below 69 K.</p>

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“…GaMnN reported in the literature, in addition to the single crystal form, has had the form of microcrystalline grains [60,61], nanowires [62][63][64][65][66] or crystalline thin films. Thin films of GaMnN have been prepared through molecular-beam epitaxy (MBE) [55,[67][68][69][70][71][72][73][74][75][76][77][78][79][80][81][82][83] with a wide spread of substrate temperatures, deposition and annealing of a Mn-layer onto a GaN film [84,85], nebulised spray pyrolysis [86], metal organic chemical vapour deposition (MOCVD) [87,88], pulsed laser deposition (PLD) [89], Mn + [66,88,[90][91][92][93][94][95][96] or Mn + and N + [97] ion implantation into already-prepared GaN films. GaMnN has also been grown co-doped with a number of different elements [54,82,[98]…”

Section: Gamnn Preparation and Structurementioning

confidence: 99%

“…Mn-implanted GaN films show a large number of midgap energy levels, likely related to transitions involving extensive types of implantation-induced defects such as N or Ga vacancies and Ga interstitials [153]. Red-and blue-shifts of the bandgap in Mn implanted or PLD films of ∼30 meV have both been seen [66,89], and are well correlated with a respective increase or decrease of the lattice parameter [95,109]. Numerous other optical characterisation studies exist that explore the energies of transitions involving intrinsic donor and acceptor levels, excitons or levels associated with dopants such as Mg and Si [80,103].…”

Section: Optical Properties and Mn Impurity Level Positionsmentioning

confidence: 99%

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

Granville¹

0

View full text Add to dashboard Cite

<p>Materials that combine the useful properties of magnetic and semiconducting behaviours are sought for new and developing applications in electronics. In this thesis experimental studies of the properties of disordered thin films of several potentially magnetic semiconducting materials are presented. Previous research on the diluted magnetic semiconductor GaMnN is reviewed as an introduction to a study of GaMnN thin films grown with an ion-assisted deposition technique. Several complementary compositional and structural analysis techniques are used to determine that films can be grown with as much as 18 at. % Mn content and that contain no impurity phases, as are often detected in single crystalline GaMnN preparations with high Mn concentrations. The effects of varying Mn contents on the resistive, optical and magnetic properties of the thin films are investigated. The structural, electronic and magnetic properties of thin films of the potential impurity phase MnN have also been investigated and compared with band structure calculations. Recent predictions that the rare earth nitrides may have extremely useful electronic properties have been almost untested in the literature. A procedure for growing rare earth nitride thin films and capping them to protect from reaction with water vapour allows their resistivity, structural and magnetic properties to be established. The results on GdN, SmN, ErN and DyN support the recent predictions, and a more thorough study on GdN reveals that this material is a ferromagnetic semiconductor below 69 K.</p>

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Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

Majid

¹

,

Ali

²

2009

Journal of Luminescence

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Research on the Mn-implanted GaN with ferromagnetism at room temperature

Cited by 9 publications

References 8 publications

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

Structural, Electronic and Magnetic Properties of GaMnN, MnN and Rare-Earth Nitride Thin Films

Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

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