Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

Majid, Abdul; Ali, Akbar

doi:10.1016/j.jlumin.2008.07.013

Cited by 5 publications

(5 citation statements)

References 24 publications

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“…The blue shift in the position of the band edge after the 850 • C anneal and then the subsequent red shift after the 900 • C anneal point to the respective increase and decrease in strain in the implanted samples [24]. Photoluminescence measurements were carried out on the implanted samples before and after annealing to study the effects of annealing on the luminescence properties of Mn implanted GaN and are reported elsewhere [13]. It was found that new luminescence peaks appear and blue as well as green luminescence bands are suppressed in the PL spectra after implantation.…”

Section: Optical Characterizationmentioning

confidence: 99%

“…Thermal annealing of the implanted samples is performed to repair the implantation induced damage and achieve the activation of dopants [10]. Although several reports are available on the effect of concentration on the structural, optical and magnetic properties of Mn doped GaN only a few reports are available in the literature on the effect of annealing on such properties [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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Photoinduced Phenomena in GeO₂–GeS₂ Glasses

Terakado

Tanaka

2007

jjap

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Mn ions were implanted into GaN thin films with six doses ranging from 10 14 to 5 × 10 16 cm −2 and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 • C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 • C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 • C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M s and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

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Section: Optical Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoinduced Phenomena in GeO₂–GeS₂ Glasses

Terakado

Tanaka

2007

jjap

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“…The red shift of the (D 0 X) peak after this anneal is due to the decreased level of strain. After annealing at 850 1C, Majid et al have observed, for Mn implanted GaN layers, a shift of the band edge towards lower energies and they attributed this to strain relaxation and improved lattice recovery [18]. Near-infrared PL spectra (at 10 K) of as-grown before and after annealing at 1075 1C is shown in Fig.…”

Section: Resultsmentioning

confidence: 94%

“…The decrease in the intensity of the blue luminescence after annealing for our GaN:V layers may be due to the dissociation of the complex responsible for this luminescence involving V Ga (example: V Ga -V N ). Indeed, an annealing temperature above 800 1C causes the dissociation of this type of complex [18,19]. For Mn implanted GaN layers, Majid et al [18] observed a disappearance of the blue band after annealing at 850 1C with an emergence of a peak related to oxygen.…”

Section: Resultsmentioning

confidence: 99%

“…Indeed, an annealing temperature above 800 1C causes the dissociation of this type of complex [18,19]. For Mn implanted GaN layers, Majid et al [18] observed a disappearance of the blue band after annealing at 850 1C with an emergence of a peak related to oxygen. This result was interpreted by the dissociation of the complex V Ga -O N involved in this luminescence.…”

Section: Resultsmentioning

confidence: 99%

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