An aggressive junction design concept is proposed for further scaling of bulk CMOS featuring selective epi-growth raised source/drain extensions (RSDext) in conjunction with high temperature millisecond annealing (MSA) process. The junction design window enlarged by introducing the RSDext enables us to perform elaborate control of slight "intentional" diffusion onto the MSA process rather than aiming complete-diffusion-less junctions. Such the "effective" ultra-shallow junctions under the raised S/D-extensions are demonstrated, in this paper, to exhibit both lower parasitic resistance and lower junction leakage while maintaining superior short-channel-effect suppression, i.e. V TH roll-off characteristics, and any reliability issues.
Towards an application for the mesa etching process of semiconductor quantum devices, a saddle-field argon fast atom beam (FAB) source was characterized in terms of energy distribution spectra for residual ions and neutralization coefficient under various process conditions. The neutralization coefficient was evaluated to be in the order of 90% and slightly depended on operating parameters. It was confirmed that a small discharge current and a small discharge voltage contribute to obtaining a high neutralization efficiency. Argon FAB etching was performed to form a mesa structure of GaInP/GaAs triple-barrier resonant tunneling diodes (TBRTDs), and clear negative differential resistance characteristics were obtained with high yields. The FAB etching process also contributes to obtaining a low measured peak voltage in TBRTDs as compared with the case of wet etching.
Fast atom (neutral) beam etching technique have already been developed [1],[2] and studied especially for fabrication processes in silicon based electron devices[3], however, electronic property of FAB etching for Ill-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing intentionally neutralized beam bombardment on n-GaAs surface, and moreover relation between neutralization properties and FAB etching properties for n-InGaAs were investigated, focusing on argon.
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