Fundamental Properties of Intentionally Neutralized Argon Fast ATM Beam Etching for III-V Semiconductors

Abstract

Fast atom (neutral) beam etching technique have already been developed [1],[2] and studied especially for fabrication processes in silicon based electron devices[3], however, electronic property of FAB etching for Ill-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing intentionally neutralized beam bombardment on n-GaAs surface, and moreover relation between neutralization properties and FAB etching properties for n-InGaAs were investigated, focusing on argon.