For tetragonal barium titanate (BaTiO3) single crystals, an electric field (E-field) applied along the [111]c direction can induce an engineered-domain configuration in these crystals. In this study, such engineered-domain configurations of different domain sizes were induced in BaTiO3 single crystals, and their piezoelectric properties were investigated as a function of domain size. Prior to this study, the dependences of the domain configuration on the temperature and E-field were investigated using a polarizing microscope in order to understand the optimum poling condition for fine- and coarse-domain configurations. We found that above the Curie temperature (TC) of 132.2 °C, when an E-field above 6.0kV∕cm was applied along the [111]c direction, an engineered domain with a fine-domain configuration appeared. Moreover, it was also found that this fine-domain configuration remained stable at room temperature without the E-field. On the other hand, the coarse-domain configuration was obtained upon poling at just below TC. Finally, the piezoelectric properties of 31 resonators with different domain sizes of 40–5.5μm were measured. As a result, it was found that the piezoelectric properties, such as d31 and k31, increased significantly with decreasing domain size.
For the [111] oriented barium titanate (BaTiO 3 ) single crystals, the patterning electrode was used to induce the finer engineered domain configurations with domain size below 5 µm. The poling treatment was performed at 134.0 • C under electric fields below 6 kV/cm to inhibit the burning of the patterning electrode with photoresist. As the results, the gradient domain sizes from 3 µm (high voltage side) to 8-9 µm (ground side) were induced into the 31 resonator along thickness direction. For this resonator, the d 31 was measured at −243.2 pC/N using a resonance-antiresonance method.
The response of the electrostatic potential distribution within a metal-oxide-semiconductor field-effect transistor (MOSFET) to an external electric field was revealed using electron holography cross-sectional in-situ observation while applying the gate voltage to a transistor scaled down to a 25-nm gate length. Charging effects due to electron irradiation were taken into account by using complementary numerical device simulation. Direct observation of the channel potential and its response to the gate voltage can be used to determine the gate electrode effective work-function for scaled MOSFETs.
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