The principal design of a newly developed two-zone valved cracking phosphorus P 2 molecular beam source with greatly improved performance based on InP thermal decomposition is outlined. Precise dimer phosphorus beam flux control is accomplished due to a thoughtfully designed and externally activated faucet placed between the InP decomposition zone and the cracking area of P 4 vapors. Experimental tests show that the source can be easily incorporated into the standard ion-pumped molecular beam epitaxy (MBE) machine and can be used successfully for the MBE growth of device quality III-V single and multi-component phosphide epilayers incorporated into single-and multi-layer heterostructures with sharp interfaces.
GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga2O3, Sb2O3, and Sb2O5. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb2O5 than Sb2O3. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb2O5 content and decrease of the elemental Sb content in the films.
To improve the performance of gallium antimonide (GaSb)-based solar cells, the bias-assisted photoelectrochemical (PEC) oxidation method was used to form an oxide passivation layer on the p-GaSb surface. The performance improvement mechanisms were attributed to the effective reduction of the surface state density and the carrier recombination in the solar cells. To further improve performance by reducing light reflection from the top surface of the GaSb-based solar cells, the oblique-angle electron-beam deposition method was used to grow an indium-tin-oxide (ITO) nanorod array on the p-GaSb surface as the antireflection coating. High performance of the resulting GaSb-based solar cells was obtained compared with the conventional solar cells.
In the present study, a method of low-temperature atomic layer epitaxy of GaAs at the initial stage of formation of a GaAs/Si heterojunction is used for growing GaAs films with a low density of threading defects. It was shown that growth of GaAs films can take place bypassing the stage of formation of islands, provided the first monolayer of GaAs is formed by atomic layer epitaxy at low temperature (200-350°С). A regime was found for growing the GaAs/Si films with a density of threading dislocations less than 10 6 cm -2 , which corresponds to the best world achievements. In this mode, the GaAs/Si and Al 0.2 Ga 0.8 As/Si structures were grown for solar-energy converters, the devices were produced, and their characteristics were measured. It is shown that during the growth of the GaAs/Si heterojunction, a p-n-junction is formed in the near-surface layer of silicon. This allows one to produce high-performance cascade converters of solar energy based on the A III B V compounds on the active Si substrate in a single growth cycle.
The effect of surface electric fields on the oscillating photoresponse spectra of gallium arsenide– metal structures is established. A shift of the oscillation extrema to the high‐ and low‐energy range is observed. The observed shifts of the oscillation extrema are explained as additional heating of the electrons by the external electric field and by the Dember field caused by illumination of the structures.
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