A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth

Putyato, М. А.; Preobrazhenskii, V.V.; Semyagin, B. R.; Feklin, D. F.; Pakhanov, N. A.; Емельянов, Е.А.; Chikichev, S. I.

doi:10.1088/0268-1242/24/5/055014

Cited by 14 publications

(6 citation statements)

References 13 publications

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“…Crucible-type molecular sources were used to obtain flows of Ga and Si atoms, and valved sources with a cracking zone were used to generate flows of As 2 and P 2 molecules [5]. The surface state during the growth process was monitored by the method of high-energy electron diffraction reflection (RHEED).…”

Section: Methodsmentioning

confidence: 99%

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates

Emelyanov

Feklin

Putyato

et al. 2014

Optoelectron.Instrument.Proc.

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GaAs films on Si substrates miscut from the (001) plane by 6 • in the [110] direction are grown by molecular beam epitaxy (MBE). GaAs films are grown both on the Si surface terminated by arsenic atoms and on thin pseudomorphic GaP/Si layers. The condition of formation of the As sublayer and the first monolayer of GaP on the Si surface is defined as the GaAs film orientation (001) or (001). The processes of Si surface preparation and formation of the As sublayer and GaAs and GaP epitaxial layers are monitored by means of high-energy electron diffraction reflection (RHEED). The grown structures are investigated by methods of X-ray diffraction, atomic force microscopy (ATM), high-resolution transmission electron microscopy (HRTEM), and low-temperature luminescences. It is shown that the epitaxial film orientation affects both the surface morphology and its crystalline properties. Intense photoluminescence is obtained from the In0.17Ga0.83As quantum well structure grown on the GaAs/Si buffer layer.

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Section: Methodsmentioning

confidence: 99%

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates

Emelyanov

Feklin

Putyato

et al. 2014

Optoelectron.Instrument.Proc.

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“…To obtain the Ga, Al, and In fluxes, solid-state molecular sources (MS) were emplyed. The fluxes of As 2 and P 2 molecules were produced by means of valve sources with a cracking [7]. The setup was equipped with a high-energy electron reflection diffractometer.…”

Section: Methodsmentioning

confidence: 99%

“…4). The following characteristics of solar cells with the area 1.11 cm 2 were obtained: shortcircuit current J sc = 32 mА/cm 2 , open-circuit voltage V oc = 0.96 V, fill factor of the current-voltage characteristic 0.80, and the efficiency 18% for the solar spectrum AM0 [7]. These values are close to those of similar solar cell produced by MOCVD (for example, by the German firm «RVE» [19]).…”

Section: Growth Of the Gaas/si And Al X Ga 1-x As/si Heterostructuresmentioning

confidence: 99%

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem A III B V/Si-solar energy converters on an active silicon substrate

et al. 2011

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In the present study, a method of low-temperature atomic layer epitaxy of GaAs at the initial stage of formation of a GaAs/Si heterojunction is used for growing GaAs films with a low density of threading defects. It was shown that growth of GaAs films can take place bypassing the stage of formation of islands, provided the first monolayer of GaAs is formed by atomic layer epitaxy at low temperature (200-350°С). A regime was found for growing the GaAs/Si films with a density of threading dislocations less than 10 6 cm -2 , which corresponds to the best world achievements. In this mode, the GaAs/Si and Al 0.2 Ga 0.8 As/Si structures were grown for solar-energy converters, the devices were produced, and their characteristics were measured. It is shown that during the growth of the GaAs/Si heterojunction, a p-n-junction is formed in the near-surface layer of silicon. This allows one to produce high-performance cascade converters of solar energy based on the A III B V compounds on the active Si substrate in a single growth cycle.

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“…Штат" (Россия). Для получения потоков атомов Ga, Al, Si и молекул Sb 4 использовались тигельные источники, а для получения потоков молекул As 2 и P 2 -вентильные источники с зоной крекинга [28]. Эпитаксия проводилась на подложках Si(001), отклоненных на 6 • к плоскости (111).…”

Section: экспериментunclassified

Молекулярно-лучевая эпитаксия GaSb на вицинальных подложках Si(001): влияние условий зарождения слоев на их структурные и оптические свойства

Петрушков¹,

Путято²,

Васев³

et al. 2022

Физика И Техника Полупроводников

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GaSb films were grown by molecular beam epitaxy on vicinal Si(001) substrates with miscut angles of 6° to the (111) plane. Films were formed on AlSb(001)/Al/As/Si, AlSb(00-1)/Al/As/Si, GaSb(00-1)/Ga/P/Si and GaSb(001)/P/Ga/Si transition layers. The influence of orientation, composition, and formation conditions of transition layers on the crystal perfection and optical properties of GaSb films was studied. The GaSb film grown on the GaSb(00-1)/Ga/P/Si(001) transition layer has the best structural and optical properties.

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A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth

Cited by 14 publications

References 13 publications

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem A III B V/Si-solar energy converters on an active silicon substrate

Молекулярно-лучевая эпитаксия GaSb на вицинальных подложках Si(001): влияние условий зарождения слоев на их структурные и оптические свойства

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