Effect of electron heating by surface electric fields on oscillating photoresponse spectra of gallium arsenide-metal structures

Abstract

The effect of surface electric fields on the oscillating photoresponse spectra of gallium arsenide– metal structures is established. A shift of the oscillation extrema to the high‐ and low‐energy range is observed. The observed shifts of the oscillation extrema are explained as additional heating of the electrons by the external electric field and by the Dember field caused by illumination of the structures.

Electrostatic potential and quantum transport in a one-dimensional channel of an induced two-dimensional electron gas

“…An embedded electric field in the buffer layer may decrease due to illumination to a value close to zero. 16 We assume that this field is independent of V tg , and apply a simple picture to estimate the derivative of the potential dU/dz outside the triangular well in the bulk GaAs from the threshold voltage V sg th for a 2DEG ͑Fig. 5͒.…”

Reversal of spin polarization direction in excitonic photoluminescence of AlGaAs

“…4), and one takes into account the high spin relaxation rates of holes [1,15]. In the following, though the effective masses of holes in the sub-bands split by quantization or strain might not differ as strongly as they do in bulk GaAs around the zone center [16], we will still designate the sub-bands with hole angular-momentum projections of 1/2 and 3/2 as LH and HH, respectively. In order to illustrate the generation and recombination of both free carriers and excitons, fig.…”