The influence of impurities and additional illumination on the photoconductivity of semiinsulating GaAs in exciton region

It is well known that photons with energies ranging from 1 to 1.35 eV induce strong transformations on the photocurrent response of semiinsulating bulk GaAs. There are two photomemory effects which are strongly dependent on the sample kind; so there are samples that — exhibit an enhancement of the 1 to 1.35 eV extrinsic photocurrent after sufficiently long excitation below 120 K, whereas other samples show optical quenching of the photocurrent under the same excitation conditions. These phenomena can be understood on the basis of strong changes on the configuration of deep traps under illumination with photons ranging from 1 to 1.35 eV. The new configuration of the deep traps can be originated by defect reactions involving association and/or dissociation of complex defects, when the electronic occupation is changed by these photons. In this context, it should be very interesting to test the behaviour of shallow traps during the defect reaction mechanism. Therefore the photocurrent is studied in the spectral region of the band gap edge, after excitation with 1 to 1.35 eV photons. The results obtained confirm that shallow trap concentrations are strongly influenced by variations in the charge state of deep traps. Thus samples characterized by optical quenching of the extrinsic photocurrent undergo a complete quenching of the near intrinsic photocurrent (1.45 eV band), whereas samples showing optical enhancement of the extrinsic photocurrent, exhibit an enhancement of the 1.45 eV near intrinsic photocurrent band, whose maximum is also shifted towards 1.475 eV.

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Optically induced photomemory by 1 to 1.35 eV photons in the near-intrinsic spectral region on semiinsulating bulk GaAs

Jiménez

Bonnafe

Hernández

et al. 1985

phys. stat. sol. (a)

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Double source optical absorption and spectral photoconductivity measurements in the extrinsic region of semiconductors

Pastrňák

1987

Czech J Phys

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Photoluminescence and photoconductivity spectra as a function of photoexcitation density in a GaAlAs/GaAs quantum well

Aoki

Sakamoto

Tanigawa

2008

Physica E: Low-dimensional Systems and Nanostructures

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The influence of impurities and additional illumination on the photoconductivity of semiinsulating GaAs in exciton region

Cited by 6 publications

References 33 publications

Optically induced photomemory by 1 to 1.35 eV photons in the near-intrinsic spectral region on semiinsulating bulk GaAs

Optically induced photomemory by 1 to 1.35 eV photons in the near-intrinsic spectral region on semiinsulating bulk GaAs

Double source optical absorption and spectral photoconductivity measurements in the extrinsic region of semiconductors

Photoluminescence and photoconductivity spectra as a function of photoexcitation density in a GaAlAs/GaAs quantum well

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