Articles you may be interested inPhotoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry J. Vac. Sci. Technol. B 28, 993 (2010); 10.1116/1.3484249 Study of 193 nm photoresist degradation during short time fluorocarbon plasma exposures. II. Plasma parameter trends for photoresist degradation Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasmaa) In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO 2
Articles you may be interested inIon multibeam nanopatterning for photonic applications: Experiments and simulations, including study of precursor gas induced etching and deposition Fabrication of 100 nm metal lines on flexible plastic substrate using ultraviolet curing nanoimprint lithographyThe authors managed to accomplish an etching condition for a self-aligned contact ͑SAC͒ structure patterned with the 193 nm lithography. With lowering the substrate temperature from the previous SAC etching condition optimized for the 248 nm lithography, they could minimize the 193 nm photoresist deformation. The low-temperature setting is found to form relatively thicker, more uniform, and more carbon-rich fluorocarbon polymer film on the photoresist top and sidewall, which effectively prevents the ion-enhanced selective volatilization of carbonyl groups of the 193 nm photoresist ͓Ling et al. J. Vac. Sci. Technol. B 22, 2594 ͑2004͔͒. Along the contact hole, the transmission electron microscope-energy dispersive x-ray spectrometry and field emission-Auger analyses were performed for the two temperature settings. At the low-temperature setting, relatively thinner fluorocarbon film with high fluorine content is observed within the contact hole, which is consistent with the observed etching phenomena of both the decrease in the etching selectivity of SiO 2 to Si 3 N 4 and the increase in the etching open strength within the SAC narrow slit. They could maintain the proper Si 3 N 4 etching selectivity even at the low temperature with utilizing a part of the increased etching open strength endowed by decreasing the substrate temperature. They propose a model consistently describing most of all the SAC etching phenomena and surface analysis results observed in this work. The model separates the fluorocarbon radicals into the two groups, the carbon-and fluorine-abundant ones and considers the carbon-abundant radicals much stickier.
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