An ideal metal-semiconductor Schottky barrier contact was made by chemically depositing thin films of molybdenum on n-type silicon by the hydrogen reduction of molybdenum pentachloride at temperatures between 390°C and 500°C. Current-voltage, capacity-voltage, and photoelectric measurements were used to investigate the characteristics of molybdenum-silicon diodes thus produced. The junction is shown to be very close to the ideal Schottky barrier with the barrier height measured with respect to the Fermi energy of 0.57±0.02 eV.
Scattering of positronium atoms by hydrogen atoms has been investigated using the static exchange model and the first Born approximation (FBA) using only the exchange interaction. The FBA elastic total cross section at very low energy is very close to the estimated value of Massey and Mohr in the zero energy limit. We report total elastic, differential and quenching cross sections using the static exchange model for the energy range 0.068-100 eV. The present static exchange results are found to differ from the corresponding results of Fraser. The ratio of the quenching to total elastic cross section approaches the value 0.25 with increasing energy as predicted by Massey and Mohr.
N § implantation into p-type a-SiC (6H-SiC, 4H-SiC) epilayers at elevated temperatures was investigated and compared with implantation at room temperature (RT). When the implant dose exceeded 4 • 10 '5 cm -2, a complete amorphous layer was formed in RT implantation and severe damage remained even after post implantation annealing at 1500~ By employing hot implantation at 500-800~ the formation of a complete amorphous layer was suppressed and the residual damage after annealing was significantly reduced. For implant doses higher than 10 x5 cm -2, the sheet resistance of implanted layers was much reduced by hot implantation. The lowest sheet resistance of 542gg-was obtained by implantation at 500 ~ 800~ with a 4 x 1015 cm -2 dose. Characterization of n+-p junctions fabricated by N + implantation into p-type epilayers was carried out in detail. The net doping concentration in the region close to the junction showed a linearly graded profile. The forward current was clearly divided into two components of diffusion and recombination. A high breakdown voltage of 615 -810V, that is almost an ideal value, was obtained, even if the implant dose exceeded 1015 cm -2. By employing hot implantation at 800~ the reverse leakage current was significantly reduced.
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