Molybdenum-Silicon Schottky Barrier

Kano, G.; Inoue, Morio; Matsuno, Jin-ichi; Takayanagi, Shigetoshi

doi:10.1063/1.1703151

Cited by 26 publications

(8 citation statements)

References 9 publications

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“…7d shows strong coupling between the phase of the up-down state and the amplitude of the gamma oscillations. 41 The bioresorbable electrode can also be used for cortical recordings of somatosensory-evoked potentials (EPs). Figure 7e shows the cortical response to a focal electrical stimulation of the contralateral whisker pad recorded with the bioresorbable and the control electrodes.…”

Section: Resultsmentioning

confidence: 99%

“…The additional capacitor might suggest a Schottky barrier at the Mo/Si interface. 41 The interface charge transfer resistance, R ct , and double layer capacitance, C dl , are found, from fitting, to be 2.2 GΩ and 0.45 nF, respectively. The lifetime of the current Si electrodes (10 15 cm −3 , 1.5 μm) is expected to be ∼50 days at 37 °C based on the abrupt change in the electrode EIS in accelerated tests at 70 °C at 4 days (Figure S5).…”

Section: T H Imentioning

confidence: 95%

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Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics

et al. 2017

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The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

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Section: Resultsmentioning

confidence: 99%

Section: T H Imentioning

confidence: 95%

Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics

et al. 2017

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“…4 together with a possible probe contact scenario. 2 Schottky behavior has been observed for a͒ Electronic mail: jhartley1@uamail.albany.edu n-type silicon with a resistivity of 5 ϫ 10 −8 ⍀ cm, with a surface doping of 1 -2 ϫ 10 15 . Refractory materials such as tungsten ͑W͒, vanadium ͑V͒, and molybdenum ͑Mo͒ are known to form Schottky diodes with silicon.…”

Section: Mask Structurementioning

confidence: 99%

Electrical characterization of multilayer masks for extreme ultraviolet lithography

Hartley

Raghunathan

Govindaraju

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEvaluation of extreme-ultraviolet lithography mask absorber pattern on multilayer phase defect using extremeultraviolet microscope Voltage potentials on the surface of a mask blank form one of the mechanisms by which errors in mask patterning may be introduced. When electrical currents flow through the mask either from the patterning beam or induced through other means, it is the impedance to ground from the point being patterned on the mask that determines the potential developed. Ten multilayer coated mask blanks from four sources were provided by Sematech for electrical characterization. The initial purpose of this project is to experimentally determine the resistance between various points in the quality area to likely ground locations on the mask. The mask can be grounded on the top, side or bottom edges. Initial attempts to characterize the resistance with a variety of measurement tools proved to be inconsistent. A test fixture was then assembled to enable voltage-current ͑V-I͒ characteristic measurements to be made on the samples. Several key issues were observed. First, the behavior was not very stable-the V-I characteristics were observed to transition between several different resistance modes. Second, quite a few of the modes observed exhibited semiconductor-like behavior. We have included representative examples of the results. Details of the experimental setup and the results obtained from the samples are presented and the behavior is explained.

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“…Bütün yarıiletken cihazların kararlılığında ve güvenilirliğinde ortaya çıkabilecek problemlerin çoğu yüzey koşullarıyla ilgili olduğu için MS kontaklar yardımıyla yüzey fiziğini anlamak aygıt uygulamalarında büyük önem taşır. Literatürde MS ve MIS yapılarla ilgili farklı çalışmalar olmasına rağmen muhtemel akım-iletim mekanizmaları, kapasitör özellikleri, M/S ara yüzeyinde oluşan engelin biçimi, yapısı ve elektriksel karakterizasyonu ile ilgili hala bilinmeyen ve iyileştirilmesi gereken özellikler bulunmaktadır [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Bunun için, Schottky engel diyotların akım iletim mekanizmalarının özellikle geniş frekans, sıcaklık ve voltaj aralıklarında incelenmesi önemlidir.…”

Section: Introductionunclassified

“…Bazı araştırmalar sonucunda Mo-Si, Pt-Si ve Hf-Si sistemlerinin Schottky engelinin manyetik saçtırma yöntemiyle oluşturulabileceği rapor edilmiştir [3,5] Bu yöntem yüksek biriktirme oranı ve alttaş üzerinde iyi bir kristal film oluşturabilme özelliğine sahiptir. Ayrıca Schottky engel yapımı için kullanılan Tungsten [6], Vanadyum [7], ve Molibden [8][9][10] gibi metallerin yüksek sıcaklıklarda Au/Si sistemlerine göre daha güvenilir ve daha esnek olabileceği beklenir [11][12].…”

Section: Introductionunclassified

Analysis of Current-Voltage and Capacitance-Voltage Characteristics of Mo/n-Si Schottky Diodes

Güçlü

Özdemir

Aldemir

2019

Düzce Üniversitesi Bilim Ve Teknoloji Dergisi

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Bu çalışmada Mo/n-Si Schottky diyotların bazı elektriksel özellikleri incelendi. Diyotlar, Molibdenin (Mo) n-tipi Silisyum (Si) üzerine manyetik saçtırma yöntemi kullanılarak biriktirilmesiyle üretildi. Akım-voltaj (I-V) ve kapasite-voltaj (C-V) ölçümleri oda sıcaklığında alındı. İdealite faktörü (n=1,48), sıfır beslem engel yüksekliği ( b0 =0,72 eV), seri direnç (R s =2,02 k) gibi temel diyot parametreleri I-V verileri kullanılarak elde edildi. Ayrıca engel yüksekliği ve katkılama yoğunluğu (N D) değerleri 1kHz-3MHz frekans aralığında C-V ölçümlerinden belirlendi. I-V ve C-V ölçümlerinden elde edilen  b değerleri karşılaştırıldı. Her iki yöntemden elde edilen engel yüksekliği değerlerinin farklılığı, engel yüksekliğinin homojen olmayışı olgusuna ve geleneksel I-V ve C-V yöntemlerinin farklı tabiatına atfedildi.

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Molybdenum-Silicon Schottky Barrier

Cited by 26 publications

References 9 publications

Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics

Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics

Electrical characterization of multilayer masks for extreme ultraviolet lithography

Analysis of Current-Voltage and Capacitance-Voltage Characteristics of Mo/n-Si Schottky Diodes

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