Mapping of Vanadium-Related Luminescence on SiC Wafer at Room Temperature

Abstract

Scattering of positronium atoms by hydrogen atoms has been investigated using the static exchange model and the first Born approximation (FBA) using only the exchange interaction. The FBA elastic total cross section at very low energy is very close to the estimated value of Massey and Mohr in the zero energy limit. We report total elastic, differential and quenching cross sections using the static exchange model for the energy range 0.068-100 eV. The present static exchange results are found to differ from the corresponding results of Fraser. The ratio of the quenching to total elastic cross section approaches the value 0.25 with increasing energy as predicted by Massey and Mohr.

Thermally stimulated luminescence in full-size 4H-SiC wafers

“…At room temperature (figure 3), two broad PL bands persist: 'red' and infrared. The latter is a superposition of the V band broadened at room temperature [10] and additional strong IR peaks at 1.06 and 1.11 eV. Our primary concern in this study is the 'red' 1.8 eV luminescence.…”

Role of Fermi-level depinning in quenching of V4+ related photoluminescence in semi-insulating 4H-SiC

“…In PL experiments, two sets of vanadium-related intra-band transitions (α lines and β lines) are commonly observed depending on the substitution site (hexagonal or cubic) in 4H-SiC. Typically, the low temperature PL spectra obtained for V 4+ in 4H-SiC consists of a doublet β 1,2 (928.4 meV) attributed to substitution at the hexagonal site while the other four lines α 1 (967.3 meV), α 2 (968.1 meV), α 3 (969.5meV), and α 4 (970.3 meV) are assigned to originate from the cubic site [7,[28][29][30][31]. The exact site assignments of these transitions are still under debate.…”

Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

“…During illumination, these states create additional transition paths, as indicated by the yellow arrows in Figure 1, which can be detected in the absorption spectrum but do not contribute to photocurrent. [ 21,22 ] These pathways are responsible for the interest as a quantum emitter. As a result, although it is demonstrated that V‐doped SiC can be efficiently excited using extrinsic illumination (i.e., with sub‐bandgap light), optical transitions and their dependence of wavelength have never been quantified for this material.…”