Thermally stimulated luminescence in full-size 4H-SiC wafers

Ostapenko, S.; Suleimanov, Yu. M.; Tarasov, I.; Lulu, S.; Saddow, Stephen E.

doi:10.1088/0953-8984/14/48/392

Cited by 11 publications

(16 citation statements)

References 10 publications

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“…For spectral PL and TSL measurements, the luminescence was dispersed by SPEX500 grating spectrometer coupled with either a photomultiplier tube or a liquid nitrogen cooled Ge-detector. The experimental set-up was published elsewhere [4,5].…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, a strong motivation to better understand the origin and properties of compensating impurities and defects is evident. Spatially resolved optical metrology on full-size SiC wafers offers a non-contact and non-destructive characterization for quality assurance purposes [4].In this paper we report on thermal activation (increase) with raising temperature of the 1.2 eV photoluminescence (PL) band in SI 6H-SiC wafers. This unusual recombination effect was recently observed and explored in detail for visible 1.82 eV PL band in p-type SiC and attributed to thermal ionization of holes from partially compensated acceptor traps (Al or B) to the valance band and their radiative free-tobound recombination [5].…”

mentioning

confidence: 95%

“…Such a mechanism of the PL enhancement is quite different to the case we discussed above for the "orange" centers (1 st region). A principal "r" 4 The model of (a) "orange" and (b) infrared 1.2 eV luminescence centers in SI 6H-SiC. T1 and T2 are traps associated with corresponding recombination defects; "r" is a deep center responsible for photoconductivity.…”

mentioning

confidence: 99%

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Temperature activated 1.2 eV photoluminescence in semi‐insulating SiC wafers

Korsunska

Кушниренко

Tarasov

et al. 2005

phys. stat. sol. (c)

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Temperature dependent photoluminescence (PL) spectroscopy was performed on semi-insulating and selfcompensated (non-vanadium doped) 6H-SiC wafers. PL intensity of the infrared band at 1.2 eV shows a remarkable increase up to two orders of magnitude, when the temperature was raised from 110 K to 175 K. We correlate the temperature dependence of the 1.2 eV PL band with dark and photoconductivity variation in the temperature range from 77 K to 300 K. Concurrently, thermally stimulated luminescence and thermally stimulated conductivity studies have been performed to provide information on the electron-hole traps participating in radiative transitions. A recombination model of the 1.2 eV band transition is proposed. 9 Ω.cm at room temperature can be produced by incorporating deep defects of presumably intrinsic origin [2]. Despite substantial progress in SiC technology which offers now-days 50.8 mm and 76.2 mm diameter wafers [3], the yield and performance of SiC based devices are still limited by structural defects in the substrates. Therefore, a strong motivation to better understand the origin and properties of compensating impurities and defects is evident. Spatially resolved optical metrology on full-size SiC wafers offers a non-contact and non-destructive characterization for quality assurance purposes [4].In this paper we report on thermal activation (increase) with raising temperature of the 1.2 eV photoluminescence (PL) band in SI 6H-SiC wafers. This unusual recombination effect was recently observed and explored in detail for visible 1.82 eV PL band in p-type SiC and attributed to thermal ionization of holes from partially compensated acceptor traps (Al or B) to the valance band and their radiative free-tobound recombination [5]. By monitoring the spatial distribution of the 1.82 eV PL and matching thermally stimulated luminescence (TSL) across the entire wafer, we proposed a simple experimental algorithm for fast non-destructive diagnostics of free carrier concentration topography in p-type SiC. The PL-TSL approach is employed in this paper to understand a mechanism of the PL activation with temperature on SI wafers.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 95%

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Temperature activated 1.2 eV photoluminescence in semi‐insulating SiC wafers

Korsunska

Кушниренко

Tarasov

et al. 2005

phys. stat. sol. (c)

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“…7 The PL mapping in combination with thermo-luminescence spectroscopy was also successfully applied to SiC. 8 In this work, the PL mapping technique was applied to V-doped and V-free SI 6H-SiC substrates, in which vanadium and native point defects, respectively, were believed to be responsible for the compensation. Point-to-point comparison between the PL maps and the resistivity maps was used to evaluate the contribution of vanadium and other deep levels to the SI properties of the crystal.…”

Section: Introductionmentioning

confidence: 99%

Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC

Chanda

Koshka

Yoganathan³

2006

J. Electron. Mater.

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A combination of room-temperature photoluminescence (PL) mapping, low-temperature PL spectroscopy, and resistivity mapping was applied to establish the origin of resistivity variations in different types of semi-insulating (SI) 6H-SiC substrates. Direct correlation between the native-defect PL and resistivity was found in undoped (V-free) SI samples. The regions with high PL intensity also showed high resistivity, indicating that native point defects are associated with the compensation mechanism in those substrates and its nonhomogeneity. A more complex correlation was established for the vanadium-doped samples. In these samples, V-related PL and native point defectrelated PL were both present at room temperature. While there was no clear correlation between the resistivity maps and the maps of PL intensity measured at either of the two peaks separately, the resistivity was in good correlation with the total PL signal consisting of both vanadium and intrinsic defect contributions. The resistivity of those wafers was apparently due to the contribution of both V-related and native point defect-related deep levels.

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“…Inhomogeneity of the defect distribution can be very dramatic and requires utilization of spatially resolved non-contact and nondestructive scanning (mapping) techniques. A number of mapping techniques were used to prove defect profiling in SiC wafers, including photoluminescence [7,8], spectroscopic optical transmission [9], capacitive contactless resistivity [10], Raman imaging [11], and thermally stimulated luminescence [12,8]. Electron and hole traps in the forbidden energy gap usually deteriorate device effectiveness due to the trapping of free charge carriers generated by irradiation.…”

Section: Introductionmentioning

confidence: 99%

Effect of high-energy protons on 4H-SiC radiation detectors

Kažukauskas¹,

Jasiulionis²,

Kalendra³

2005

Lith. J. Phys.

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We present investigation of high energy radiation detectors based on 4H-SiC as influenced by irradiation with 24 GeV proton doses of up to 10 16 cm −2 . SiC detectors have been produced from n-type 4H-SiC epilayers grown on the top of the n + -type substrate. They were supplied with a nickel ohmic contact on the back surface and a gold Schottky contact on the top. Activities and numbers of 7 Be and 22 Na atoms produced in SiC detectors after the irradiation were measured experimentally. Activities of other radionuclides were calculated on the basis of this data. Activities of 7 Be and 22 Na were proportional to the total irradiation dose and ranged from 1.3 to 890 Bq and from 1.9 to 950 Bq, respectively. In the samples irradiated with 1 · 10 13 and 1 · 10 16 protons/cm 2 390 days after the irradiation the number of radiated electrons with different energies was from 1.0 to 600 per second, respectively. Contact properties of the devices were investigated by means of the current-voltage (I-V ) characteristics. It was found that proton irradiation with the highest doses leads to the significant changes of the contact properties. Namely, the contact potential barrier grows from about 0.7-0.75 eV in the pristine and less irradiated samples up to about 0.84 eV in the detectors irradiated by highest doses. Moreover, rectifying behaviour of the Schottky contacts becomes much less expressed upon irradiation, tending to become nearly symmetrical. The observed behaviour probably can be explained by the appearance of the irradiation-induced inhomogeneous regions of detectors that limits the applicability of classical contact theory.

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Thermally stimulated luminescence in full-size 4H-SiC wafers

Cited by 11 publications

References 10 publications

Temperature activated 1.2 eV photoluminescence in semi‐insulating SiC wafers

Temperature activated 1.2 eV photoluminescence in semi‐insulating SiC wafers

Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC

Effect of high-energy protons on 4H-SiC radiation detectors

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