Photoluminescence, its temperature dependence, and photoluminescence excitation spectra of InAs quantum dots embedded in asymmetric InxGa1−xAs∕GaAs quantum wells [dots in a well (DWELL)] have been investigated as a function of the indium content x (x=0.10–0.25) in the capping InxGa1−xAs layer. The asymmetric DWELL structures were created with the aim to investigate the influence of different barrier values at the quantum dot (QD)/quantum well interface on the photoluminescence thermal quenching process. The set of rate equations for the two stage model for the capture and thermal escape of excitons in QDs are solved to analyze the nature of thermal activation energies for the QD photoluminescence quenching process. The two stage model for exciton thermal activation was confirmed experimentally in the investigated QD structures as well. The localization of nonradiative defects in InAs∕InGaAs DWELL structures is discussed on the base of comparison of theoretical and numerically calculated (fitting) results.

Scanning photoluminescence (PL) spectroscopy was performed on as-grown and processed multicrystalline silicon (mc-Si) wafers to investigate the defect distribution affecting the efficiency of solar cells. In highly inhomogeneous mc-Si prepared by (i) edge-defined film-fed growth or (ii) a block-casting technique, regions of a wafer with enhanced recombination activity and reduced minority carrier lifetime exhibit an intensive 'defect' PL band at room temperature with the maximum at about 0.8 eV. By comparing PL mapping with the distribution of dislocations, we present experimental evidence that the 0.8 eV band corresponds to electrically active dislocation networks. This was confirmed using low-temperature PL spectroscopy, which revealed a characteristic quartet of the dislocation D-lines. One of these dislocation lines, D1, can be tracked as temperature increases and linked to the 'defect' band. Strong linear polarization of the 0.8 eV PL band corresponds to a preferential localization of defects in regions with a high level of elastic stress measured with scanning infrared polariscopy. The origin of the 0.8 eV PL band is attributed to dislocations contaminated with impurity precipitates.

We report on optical enhancement of the 655 nm photoluminescence (PL) band intensity in the core-shell CdSe/ZnS nano-particles (quantum dots) under a laser illumination. Kinetic curves and 80 K-to-room temperature dependences of the PL intensity reveal two parallel processes: a reversible enhancement when the PL intensity is recovered after the laser illumination is turned off, and a non-reversible permanent increase of the PL output. Experimental data evidence that the PL enhancement is attributed to the light-activated increase of the energy barrier for photo-generated carriers to escape quantum dot levels. A trap recharging and/or photo-chemical bond restructure play a possible role in the luminescence photo-enhancement.

The resonance ultrasonic vibrations (RUV) technique is adapted for non-destructive crack detection in full-size silicon wafers for solar cells. The RUV methodology relies on deviation of the frequency response curve of a wafer, ultrasonically stimulated via vacuum coupled piezoelectric transducer, with a periphery crack versus regular non-cracked wafers as detected by a periphery mounted acoustic probe. Crack detection is illustrated on a set of cast wafers. We performed vibration mode identification on square-shaped production-grade Si wafers and confirmed by finite element analyses. The modelling was accomplished for the different modes of the resonance vibrations of a wafer with a periphery crack to assess the sensitivity of the RUV method relative to crack length and crack location.

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