Room-temperature luminescence and electron-beam-induced current (EBIC) recombination behaviour of crystal defects in multicrystalline silicon

Kittler, M.; Seifert, W.; Arguirov, T.; Tarasov, I.; Ostapenko, S.

doi:10.1016/s0927-0248(01)00194-5

Cited by 54 publications

(34 citation statements)

References 14 publications

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“…Some reported spectra in which the D2 line was a less-significant peak embedded on the high-energy side of the intense D1 line [7], [11], [12], [14]. Others reported spectra with the D2 line present, but with D1 absent [9], [13].…”

mentioning

confidence: 99%

Micrometer-Scale Deep-Level Spectral Photoluminescence From Dislocations in Multicrystalline Silicon

Nguyen

Rougieux

Wang

et al. 2015

IEEE J. Photovoltaics

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Abstract-Micrometer-scale deep-level spectral photoluminescence (PL) from dislocations is investigated around the subgrain boundaries in multicrystalline silicon. The spatial distribution of the D lines is found to be asymmetrically distributed across the subgrain boundaries, indicating that defects and impurities are decorated almost entirely on one side of the subgrain boundaries. In addition, the D1 and D2 lines are demonstrated to have different origins due to their significantly varying behaviors after processing steps. D1 is found to be enhanced when the dislocations are cleaned of metal impurities, whereas D2 remains unchanged. Finally, the D4 and D3 lines are proposed to have different origins since their energy levels are shifted differently as a function of distance from the subgrain boundaries.

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confidence: 99%

Micrometer-Scale Deep-Level Spectral Photoluminescence From Dislocations in Multicrystalline Silicon

Nguyen

Rougieux

Wang

et al. 2015

IEEE J. Photovoltaics

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“…The appearance of the D lines in the defect region was reported previously, and its relationship with the metal contamination was discussed (12,13).…”

Section: (5)mentioning

confidence: 68%

Defect Analysis in Solar Cell Silicon by Photoluminescence Spectroscopy and Topography

Tajima

Sugimoto

2009

ECS Trans.

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We review the characterization of electrically active intra-grain defects in multicrystalline silicon for solar cells. Origin of the defects was identified to be dislocation clusters forming subgrain boundaries by photoluminescence (PL) spectroscopy and topography combined with electron backscatter diffraction pattern measurement and etching/optical microscopy. PL imaging during HF etching has the advantage of very rapid detection of defects, which allows us to obtain numerous successive PL images of wafers positioned from the bottom to top of the mc-Si ingots, as well as to synthesize the three-dimensional distribution of the defects from the images. We showed the multiplication of dislocation clusters and their interaction with grain boundaries.

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“…A technique, which gives spectroscopic access to the dislocation activity, is photoluminescence spectroscopy (PL) [2][3][4]. Beside the radiative band-to-band (BB) recombination, dislocated silicon shows a quartet of lines (D1-D4) in the near infrared luminescence spectrum, with energies in the sub-band gap region [5].…”

Section: Introductionmentioning

confidence: 99%

“…Since mc-Si wafers are inhomogeneous, there is a need to combine the spectral capabilities with the ability of spatially resolving the defect areas [3,6]. PL mapping yields spatially resolved information about the dislocation distribution [7], but unfortunately, requires a long data acquisition time.…”

Section: Introductionmentioning

confidence: 99%

Novel imaging techniques for dislocation‐related D1‐photo‐luminescence of multicrystalline Si wafers – two different approaches

Schmid

Mankovics

Arguirov

et al. 2011

Phys. Status Solidi (c)

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Here we report on two different approaches, which allow rapid photoluminescence imaging of dislocation‐related D1, and band‐to‐band radiation on multicrystalline solar cell wafers at room temperature. We compared a new light emitting diode based method with the recently introduced pulsed laser based method. With both techniques we obtained spatially resolved images from 15.6 × 15.6 cm2 wafers originating from different stages of the standard solar cell production process, showing that these techniques are highly interesting for inline quality control. Both methods provide homogeneous illumination over the whole sample area. With a resolution around 300 μm, and a total recording time of ∼45 s, full D1 images could be captured by the new diode technique. The most promising fact was that surface artifacts did not lead to any noticeable disturbance in the D1 image. For acid textured wafers, the pulsed laser based method was clearly in advantage over the continuous diode technique. Possible explanations are discussed in the text. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Room-temperature luminescence and electron-beam-induced current (EBIC) recombination behaviour of crystal defects in multicrystalline silicon

Cited by 54 publications

References 14 publications

Micrometer-Scale Deep-Level Spectral Photoluminescence From Dislocations in Multicrystalline Silicon

Micrometer-Scale Deep-Level Spectral Photoluminescence From Dislocations in Multicrystalline Silicon

Defect Analysis in Solar Cell Silicon by Photoluminescence Spectroscopy and Topography

Novel imaging techniques for dislocation‐related D1‐photo‐luminescence of multicrystalline Si wafers – two different approaches

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