Formation of an ohmic electrode in SiC using a pulsed laser irradiation method

Eryu, Osamu; Kume, T.; Nakashima, Kouichi; Nakata, Takao; Inoue, Morio

doi:10.1016/s0168-583x(96)00384-9

Cited by 9 publications

(4 citation statements)

References 7 publications

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“…Mostly, research has been concentrated on n-type, C-faces 4H-SiC (000-1) due to the requirement of forming a back ohmic contact of diode or transistor. However, due to the unique advantages of laser annealing, some works [28,29] were conducted in other crystallographic directions, and planes have gradually developed. Mazzamuto [28] compared different substrate thinning strategies before metal deposition and laser annealing of 4H-SiC and proved that the top nickel silicide formed during the laser annealing.…”

Section: Sic Substrate Materialsmentioning

confidence: 99%

“…The repair of lattice defects by laser annealing is one of the research hot topics. Eryu [29] used laser-treated 6H-SiC as a substrate before Ni was thermally evaporated so that the gas phase of Ni reacted with SiC to achieve an ohmic contact. It demonstrated that surface damage of SiC can be removed during the laser annealing process.…”

Section: Sic Substrate Materialsmentioning

confidence: 99%

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Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Zou

et al. 2023

Crystals

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In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.

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Section: Sic Substrate Materialsmentioning

confidence: 99%

Section: Sic Substrate Materialsmentioning

confidence: 99%

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Zou

et al. 2023

Crystals

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“…A number of studies on exposure of silicon carbide to LI are available: laser annealing of implanted layers in SiC [1], laser stimulated recrystallization of amorphous a-SiC in crystalline c-SiC [2], formation of ohmic contacts [3,4], and laser ablation [5]. The last has been used to deposit thin SiC films [6] and to stimulate etching [7].…”

Section: Introductionmentioning

confidence: 99%

Nanostructures on SiC surface created by laser microablation

Fedorenko

Medvíd

Yusupov

et al. 2008

Applied Surface Science

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“…Such high temperature treatments complicate the SiC device fabrication. In contrast to the high temperature treatments, the pulsed laser process enables the formation of ohmic contacts to SiC at room temperature [4,5]. Furthermore the pulsed laser process enables to produce a thin ohmic contact layer.…”

Section: Introductionmentioning

confidence: 99%

Copper ohmic contacts to n-type SiC formed with pulsed excimer laser irradiation

et al. 2001

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Copper-based ohmic contacts to n-type 6H-SiC have been investigated. In this study, ohmic contacts have been fabricated with pulsed excimer laser irradiation to Cu-deposited substrates at room temperature. It is shown that current-voltage characteristics depend on the laser energy density. Contacts formed by the laser irradiation at the energy density above 1.2 J/cm 2 have shown the ohmic behavior. Cu atoms have slightly diffused into SiC by the laser irradiation at 1.4 J/cm 2 . As a result, a thin ohmic contact layer has been obtained by the laser processing. AES and XRD study have revealed that a Cu-SiC alloy containing Cu silicide (Cu 3 Si) is formed by the laser irradiation.

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Formation of an ohmic electrode in SiC using a pulsed laser irradiation method

Cited by 9 publications

References 7 publications

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Nanostructures on SiC surface created by laser microablation

Copper ohmic contacts to n-type SiC formed with pulsed excimer laser irradiation

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