Nanostructures on SiC surface created by laser microablation

Fedorenko, L.; Medvíd, A.; Yusupov, M.; Yukhimchuck, V.; Krylyuk, Sergiy; Еvtukh, А.А.

doi:10.1016/j.apsusc.2007.08.048

Cited by 19 publications

(4 citation statements)

References 19 publications

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“…Related studies have shown that the recast layer formed by laser ablation of SiC ceramics is mainly composed of SiC, Si and SiO 2 , and this is because SiC ceramics undergo thermal decomposition and oxidation reactions during the laser ablation process. The relevant chemical reaction equations are as follows [ 26 , 27 ]: SiC ( l ) = Si ( l ) + C ( s ) Si ( l ) + O 2( g ) = SiO 2( s ) C ( s ) + O 2( g ) = CO 2( g ) …”

Section: Resultsmentioning

confidence: 99%

“…cause SiC ceramics undergo thermal decomposition and oxidation reactions during the laser ablation process. The relevant chemical reaction equations are as follows [26,27]: The laser ablation threshold is the minimum laser energy density required to achieve material ablation removal. The calculation of the ablation threshold of SiC ceramics can guide the selection of relevant parameters in the subsequent polishing experiments, which can also avoid the phenomena of surface cracks caused by excessive laser energy or low polishing efficiency caused by too little laser energy.…”

Section: Calculation and Analysis Of Femtosecond Laser Ablation Thres...mentioning

confidence: 99%

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Influence of Pulse Energy and Defocus Amount on the Mechanism and Surface Characteristics of Femtosecond Laser Polishing of SiC Ceramics

Zhang

Chen

et al. 2022

Micromachines

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SiC ceramics have excellent comprehensive properties and are typical hard and brittle materials that are difficult to process and are widely used in many fields. Laser polishing technology has developed into a new surface processing technology, and femtosecond laser polishing has become an important method for the precision machining of hard and brittle materials. In this paper, SiC ceramics were ablated and polished by infrared femtosecond laser, the laser ablation threshold of SiC ceramics was calculated and the influence of pulse energy and defocus amount on the surface morphology, surface roughness, polishing depth and oxidation degree of femtosecond laser polishing of SiC ceramics were investigated. The results show that when the laser repetition frequency f = 175 kHz, wavelength λ = 1064 nm and ablation time t = 9 s, the laser ablation threshold of SiC ceramics is 0.355 J/cm2. With the increase in pulse energy, the surface roughness first decreased and then increased, and the polishing depth showed an overall upward trend. The change of defocus amount will lead to the change of the laser spot diameter. With the increase of the defocus amount, the laser spot irradiated on the workpiece surface becomes larger, and the laser energy density decreases, which results in the decrease of the laser ablation ability and polishing depth and the increase of the polished surface roughness. Periodic nano-ripple structures appeared on the laser-induced surface. Through Energy Dispersive Spectrometer (EDS) elemental analysis, it was found that there was an oxidation phenomenon in SiC ceramics polished by femtosecond laser in an air environment, and the change of pulse energy and defocus amount had insignificant effects on the degree of oxidation.

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Section: Resultsmentioning

confidence: 99%

Section: Calculation and Analysis Of Femtosecond Laser Ablation Thres...mentioning

confidence: 99%

Influence of Pulse Energy and Defocus Amount on the Mechanism and Surface Characteristics of Femtosecond Laser Polishing of SiC Ceramics

Zhang

Chen

et al. 2022

Micromachines

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“…However, as the holes are randomly distributed in the SiC, only porous structures can be obtained . Laser is also used to directly drill SiC or oxidize SiC, which is then followed by etching in KOH or HF; however, due to the intrinsic energy decay, the side wall quality of the etched structure is poor and taper angle inevitably exists. Finally, electrical field is frequently used for wet etching as an electrochemical circuit can directly provide holes required by oxidation.…”

Section: Introductionmentioning

confidence: 99%

Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

Chen

Zhang

et al. 2019

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Silicon carbide (SiC) is widely considered as the third-generation semiconductor material due to its wide band gap, superior chemical inertness, electrical and mechanical properties (high breakdown electric field (3e6 V cm −1 ), and high electron saturationSilicon carbide (SiC) is one of the most important third-generation semiconductor materials. However, the chemical robustness of SiC makes it very difficult to process, and only very limited methods are available to fabricate nanostructures on SiC. In this work, a hybrid anodic and metalassisted chemical etching (MACE) method is proposed to fabricate SiC nanowires based on wet etching approaches at room temperature and under atmospheric pressure. Through investigations of the etching mechanism and optimal etching conditions, it is found that the metal component plays at least two key roles in the process, i.e., acting as a catalyst to produce hole carriers and introducing band bending in SiC to accumulate sufficient holes for etching. Through the combined anodic and MACE process the required electrical bias is greatly lowered (3.5 V for etching SiC and 7.5 V for creating SiC nanowires) while enhancing the etching efficiency. Furthermore, it is demonstrated that by tuning the etching electrical bias and time, various nanostructures can be obtained and the diameters of the obtained pores and nanowires can range from tens to hundreds of nanometers. This facile method may provide a feasible and economical way to fabricate SiC nanowires and nanostructures for broad applications.

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“…Based on the available references, corresponding studies have performed on bulk single-crystal wafer by nanosecond laser limited to following summary. Fedorenko et al [7] , using 340 nm N2 laser and 1064/532 nm YAG laser, examined structural and morphological changes in the near-surface layer and on the surface of 6H-SiC in the range of laser intensities insufficient to cause visually observable changes on the surface. Nanostructures having a shape of a hill arising along the circular line around the focused spot were obtained.…”

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confidence: 99%

SEM observation and Raman analysis on 6H–SiC wafer damage irradiated by nanosecond pulsed Nd:YAG laser

Zhang¹,

Xu²,

Zhang³

2015

中国光学快报

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Silicon carbide (SiC) is a wide bandgap semiconductor which exhibits outstanding mechanical, chemical properties, and potential for a wide range of applications. Laser technology is being established as an indispensable powerful tool to induce structural or morphological modifications on hard brittle materials. SiC (6H-SiC wafer) is irradiated by nanosecond pulsed Nd:YAG laser to evaluate microstructure and mechanical properties of irradiation areas. Raman spectroscopy analysis reveals that irradiations produce homonuclear Si-Si bonds and disordered phase of crystalline SiC. Crystal structure changes are observed as a consequence of laser-induced melting and resolidification. Hardness in the irradiation area exhibits a significant decrease. The formation of silicon film facilitates material removal rate, surface electrical conductivity, and ceramics conjunction.

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Nanostructures on SiC surface created by laser microablation

Cited by 19 publications

References 19 publications

Influence of Pulse Energy and Defocus Amount on the Mechanism and Surface Characteristics of Femtosecond Laser Polishing of SiC Ceramics

Influence of Pulse Energy and Defocus Amount on the Mechanism and Surface Characteristics of Femtosecond Laser Polishing of SiC Ceramics

Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

SEM observation and Raman analysis on 6H–SiC wafer damage irradiated by nanosecond pulsed Nd:YAG laser

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