Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

Chen, Yun; Zhang, Cheng; Li, Liyi; Zhou, Shuang; Chen, Xin; Gao, Jian; Zhao, Ni; Wong, Ching‐Ping

doi:10.1002/smll.201803898

Cited by 35 publications

(16 citation statements)

References 40 publications

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“…[43,44] The generally accepted open circuit hν-MacEtch reaction of SiC involves three steps. [38,42] The first two, associated with carrier generation, are the product of two reduction reactions, both of which are reliant on UV light generating free electrons;…”

Section: Introductionmentioning

confidence: 99%

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Michaels

Janavicius

et al. 2021

Adv Funct Materials

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Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for harsh environment power electronics, micro and nano electromechanical systems, and emerging quantum technology by serving as hosts for quantum states via defect centers. The chemical inertness of SiC limits viable etching techniques to plasma‐based reactive ion etching methods; however, these could have significant undesirable effects for electronic and photonic devices. This paper presents a plasma‐free, open‐circuit, photo‐induced metal‐assisted chemical etch for fabricating micro and nanoscale features without the inherent high energy ion‐related surface damage. The method presented herein utilizes above bandgap ultraviolet light, patterned noble metal (Pt), and a solution consisting of an oxidant potassium persulfate (K2S2O8) and an acid, hydrofluoric acid, to spatially define the etching morphology. The parameter space is comprehensively explored to demonstrate the controllability and versatility of this technique to produce ordered arrays of micro and nanoscale SiC structures with porous or solid sidewalls, and to elucidate the etching mechanism.

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Section: Introductionmentioning

confidence: 99%

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Michaels

Janavicius

et al. 2021

Adv Funct Materials

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“…The etchings that produced non-close-packed monolayer arrays with isolated or coalesced PS nano-spheres were used as templates to fabricate Si nanowires by the metal-assisted chemical etching (MACE) method [11,40,41,42].…”

Section: Discussionmentioning

confidence: 99%

A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres

et al. 2019

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Monolayer nano-sphere arrays attract great research interest as they can be used as templates to fabricate various nano-structures. Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close-packed monolayer arrays. However, the method is still limited in terms of cost and efficiency. In this study, we demonstrate that a low frequency (40 kHz) plasma etching system can be used to fabricate non-close-packed monolayer arrays of polystyrene (PS) nano-spheres with smooth surfaces and that the etching rate is nearly doubled compared to that of the high-frequency systems. The study reveals that the low-frequency plasma etching process is dominated by a thermal evaporation etching mechanism, which is different from the atom-scale dissociation mechanism that underlines the high-frequency plasma etching. It is found that the polystyrene nano-sphere size can be precisely controlled by either adjusting the etching time or power. Through introducing oxygen as the assisting gas in the low frequency plasma etching system, we achieved a coalesced polystyrene nano-sphere array and used it as a template for metal-assisted chemical etching. We demonstrate that the method can significantly improve the aspect ratio of the silicon nanowires to over 200 due to the improved flexure rigidity.

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“…The MaCE can also be applied to semiconductors other than Si, such as Ge, [146][147][148] GaAs, [149][150][151][152][153][154][155][156][157][158][159][160][161][162][163][164] Al x Ga 1−x As, [165] GaN, [166,167] GaP, [168] InP, [169][170][171][172] SiC, [173,174] and Ga 2 O 3 [175] to fabricate various nanostructures. These compound semiconductors find widespread applications in electronics, optoelectronics, and photovoltaics, etc.…”

Section: Mace Of Semiconductors Other Than Simentioning

confidence: 99%

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Srivastava

Khang

2021

Advanced Materials

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classified into two common approaches: bottom-up chemical synthesis, such as vapor-liquid-solid growth, [16][17][18][19][20] and topdown fabrication schemes. [21][22][23] This review will focus on the top-down fabrication of Si structures using a wet chemical etching technique aided with a metal catalyst, called metal-assisted chemical etching (MaCE). [24][25][26][27][28][29][30][31][32] In comparison with top down fabrication methods based on dry etching using a reactive plasma in vacuum, MaCE is less expensive and less complex. [33][34][35] MaCE is a nano-scale reductionoxidation (redox) process that usually occurs in aqueous solution where the sample to be etched is in contact with the etchant. MaCE is a simple, cost-effective, and versatile method to produce Si nanostructures; due to these attractive features, there have been many good review articles published on the process. [36][37][38][39][40][41][42] With two-decades of research of the MaCE and its innovative variations, recent studies have focused on the various applications of Si nanostructures prepared by MaCE, including photovoltaics, [43,44] thermoelectrics and piezoelectric nanogenerators, [45] energy storage, [46][47][48] nanophotonics and optoelectronics, [49] and biosensors and biomedical applications. [50][51][52] In this review, we provide an overview of the recent advances in MaCE processes and their novel applications. To differentiate this review from previous review articles, the main emphasis is on the recently developed novel MaCE processes and the macroscale structuring of Si by MaCE. We begin the review by describing new MaCE processes, particularly catalysts for MaCE. In contrast to well-known noble metal catalysts, such as Ag, Au, and Pt, carbon-based catalysts, such as graphene, graphene oxide, and carbon nanotubes, have been successfully applied as catalysts for MaCE. In addition, TiN has been found to be a catalyst for MaCE, making the whole process CMOS-compatible. Different types of etch additives, such as various alcohols and chlorides, have also been discussed, which enhance etch uniformity by increasing the wettability of etchants and suppressing the random diffusion of excessive (holes) h + by trapping them for better etch control. Recent novel variations of the MaCE process have been introduced, such as MaCE with externally applied electric or magnetic fields. The external field has a profound effect on the output of MaCE, by controlling the etch directionality and etch rate. In addition, MaCE can be combined with unconventional patterning techniques, StructuringSi, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal-assisted chemical etching (MaCE) has been developed as a simple, low-cost, and scalable method to produce structures across widely different dimensions. The process involves various parameters, such as catalyst, substrate doping type and level, crystallography, etchant formulation, and etch additives. Careful optimization of these parameters is the key to the succe...

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Hybrid Anodic and Metal‐Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires

Cited by 35 publications

References 40 publications

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

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