Abstract:Silicon carbide (SiC) is a wide bandgap semiconductor which exhibits outstanding mechanical, chemical properties, and potential for a wide range of applications. Laser technology is being established as an indispensable powerful tool to induce structural or morphological modifications on hard brittle materials. SiC (6H-SiC wafer) is irradiated by nanosecond pulsed Nd:YAG laser to evaluate microstructure and mechanical properties of irradiation areas. Raman spectroscopy analysis reveals that irradiations produc… Show more
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