The impact of the Al and Ge ratio in the Al-Ge pastes are investigated for fabricating the single crystalline Si1-xGex thick layers on large area Si substrates by screen-printing metallization process. From X-ray reciprocal space maps, Ge fraction in the fabricated Si1-xGex thick layers are found to increase up to 40% with increasing the Ge ratio in the Al-Ge pastes. On the other hand, the interface of the Si and Si1-xGex layers are getting winding with increasing the Ge ratio in the Al-Ge pastes. The Al-Si-Ge phase diagram indicated that uniform SiGe layer can be fabricated by adjusting the Al-Ge ratio in the pastes within the liquid phase region.
Solvothermal decomposition of titanium(IV) tert-butoxide (TTB) in toluene at 573 K in the presence of silica gel (SiO 2 ) with continuous stirring yielded a titanium(IV) oxide (TiO 2 )-SiO 2 composite in which agglomerates of nanocrystalline TiO 2 were deposited on the surfaces of SiO 2 particles. Various TiO 2 -SiO 2 composites having different TiO 2 contents can be synthesized by changing the ratio of TTB and SiO 2 , and the composites had large surface areas corresponding to porous properties of SiO 2 . These TiO 2 -SiO 2 composites were used for photocatalytic removal of nitrogen oxides in air and their photocatalytic performances were compared with those of other TiO 2 -SiO 2 samples prepared by different methods. Solvothermally synthesized 74 wt.%TiO 2 -SiO 2 composite exhibited excellent photocatalytic performance (almost stoichiometric removal of NO x (98%) and very low NO 2 release (0.3%)) attributable to high photocatalytic activity of TiO 2 and high adsorption property of SiO 2 . Lesser performance of 74 wt.%TiO 2 -SiO 2 composites prepared by other methods suggested that pore-mouth plugging of SiO 2 by TiO 2 and lower level of mixing of TiO 2 and SiO 2 decreased photocatalytic performance of the composites.
junctions by surface activated bonding (SAB). The effects of the annealing temperature process on the electrical properties of the junctions were investigated by measuring their current voltage (I-V) characteristics. It was found that the leakage current of the reverse bias of n-Si/Al junctions was improved and the I-V characteristics of p-Si/Al revealed excellent linearity properties after the junctions annealing at 400 °C. The interface resistance of p +-Si/Al, and n +-Si/Al junctions decreased with increasing annealing temperature and decreased to 0.021 and 0.032 Ω•cm 2 after the junction annealing at 300 and 400 °C, respectively. These results demonstrated that thick metal Ohmic contact in devices could be realized by SAB.
We studied what effect exchange bias had on magnetic noise under high-temperature or low-aspect-ratio conditions. We found that a steep increase in magnetic noise started at around 150 ˚C with a low exchange bias (Jk ~ 0.4 erg/cm 2), and attributed this to the decrease in exchange bias. We measured the dependence of magnetic noise with a high exchange bias (Jk ~ 1.0 erg/cm 2) on temperature and found that magnetic noise was reduced under high-temperature conditions (~ 250 ˚C). We also found that magnetic noise could be diminished at room temperature even for a TMR head with a low aspect ratio (~ 0.5). This indicates that the pinned layer instability increased by reducing the head size was improved with a high exchange bias.
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