Fabrication of Si1-xGex layer on Si substrate by Screen-Printing

Nakahara, Masahiro; Matsubara, Moeko; Suzuki, Shota; Fukami, Shogo; Dhamrin, M.; Usami, Noritaka

doi:10.1557/adv.2019.15

Cited by 8 publications

(8 citation statements)

References 4 publications

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“…This method is a simple process using a conventional screen-printer and a furnace, and it has been confirmed that uniform SiGe layers with a thickness of more than 20 μm can be formed in a short processing time. [24][25][26][27][28] In this method, a liquid phase of Al-Ge-Si can be formed at a temperature below the mp of Si by screen-printing Al-Ge paste on a Si substrate. After the liquid phase is formed at high temperatures, cooling leads to the epitaxial growth of a SiGe layer at the interface of the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

“…The properties of the formed SiGe layer have been found to strongly depend on fabrication parameters such as the Al/Ge ratio of the Al-Ge paste and the annealing temperature profile. 25,26,28) In this study, the effect of ambient gas during annealing on the growth of SiGe layers was investigated in order to determine the parameters of SiGe layer formation in liquid phase growth on Si substrates using Al-Ge paste.…”

Section: Introductionmentioning

confidence: 99%

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Effect of annealing ambient on SiGe layer formation using Al–Ge paste for III–V solar cell application

Matsubara

Minamiyama

Dhamrin

et al. 2023

Jpn. J. Appl. Phys.

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A mixed paste of aluminum (Al) and germanium (Ge) (7:3) was prepared and screen-printed on silicon (Si) substrates, followed by annealing at a peak temperature of 1000 °C in an infrared rapid thermal annealing furnace to investigate the liquid-phase growth of silicon-germanium (SiGe) epitaxial layers. The gas ambient during annealing was changed to investigate the effect on SiGe layer quality and physical properties. The SiGe-formed samples were observed by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). Oxygen-containing atmosphere suppressed the SiGe layer formation by oxidizing the Al particle surface limiting the reaction of the particle to the Si surface. On the other hand, annealing in an argon atmosphere without oxygen resulted in the formation of SiGe layers with a thickness of over 30 μm.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of annealing ambient on SiGe layer formation using Al–Ge paste for III–V solar cell application

Matsubara

Minamiyama

Dhamrin

et al. 2023

Jpn. J. Appl. Phys.

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“…The solar energy industry of crystalline silicon has more than 90% global marketing compared to other solar cells [1][2][3]. Single-junction devices perform ideally at a wavelength equivalent to the band gap, and lose efficiency at all other wavelengths over the sunlight based range [4].…”

Section: Introductionmentioning

confidence: 99%

“…The current global standard efficiency of silicon solar cells is limited to the range from 25% to 26.7% [5]. However, no decision is taken to scan for new options in contrast to solar cell structures that surpass this range [1]. To increase the efficiency of the singlejunction crystalline silicon cell with a single bandgap, some studies were made in the last several years on monocrystalline silicon solar cells fabricated by different techniques with thickness around 30 µm.…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis and Simulation of c-Si/SiGe Based Solar Cell

2021

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Silicon Germanium (SiGe) solar cells with different bandgaps are used in the fabrication of the crystalline-Si/SiGe (c-Si/SiGe) double-junction cell in order to enhance the performance of the c-Si single devices. The new device is simulated with SCAPS-1D by placing the c-Si junction on the top of the SiGe solar cell. Through this simulation, one can assess the performance of the c-Si/SiGe double-junction device. The upper c-Si cell achieved an efficiency of 16.66% with 40.5 µm total thickness, while the lower cell SiGe achieved ~ 19% efficiency. By analyzing the current matching between both cells at different bandgaps for SiGe cell (1.097 eV, 1.016 eV, and 0.928 eV), a mismatch is found. But, when applying 0.882 eV bandgap for the lower cell with absorber thicknesses of 110, 100, 90, and 6.2 µm, a matching is obtained between the two junctions. The efficiency of the designed cell is found ~ 24.7%, with a maximum current density of 30.25 mA/cm 2 , achieved at an open circuit voltage of 1.01 V and a total thickness of 57.2 µm. These results indicate that the double-junction device significantly exceeds the device performance by 7.6% with equal thickness of the optimized single-junction c-Si solar cell.

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“…Recently, instead of conventional processes such as CVD and MBE, we have realized epitaxial growth of SiGe films having ~ 10 µm thickness by a process using original Al-Ge mixed pastes for screen printing on Si substrates and subsequent annealing in Ar ambient [27][28][29] . This method is a simple, low-cost, and high-speed approach that uses a melting point depression caused by the eutectic reaction, as seen in the Al-Si-Ge ternary phase diagram of Fig.…”

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confidence: 99%

Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate

Fukuda

Miyamoto

Nakahara

et al. 2022

Sci Rep

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A simple, low-cost, and non-vacuum epitaxial growth method to realize large-area semiconductors on crystalline silicon will become the game-changer for various applications. For example, we can expect the disruptive effect on the cost of large-scale III–V multi-junction solar cells if we could replace the high-cost germanium substrate with silicon–germanium (SiGe) on Si. For SiGe epitaxial growth, we attempted to develop a process using original Al–Ge pastes for screen printing and subsequent annealing. We compare two pastes including Al–Ge alloyed pastes with compositional uniformity in each particle and Al–Ge mixed pastes. We revealed that Al–Ge alloyed paste could form flatter SiGe film with much less residual pastes, supported by in-situ observations. The uniform and sufficient dissolution of the alloyed paste is responsible for these and led to higher average Ge-composition by annealing at 500 °C. The composition in SiGe was vertically graded up to ~ 90% at the topmost surface. These results show that printing and firing of Al–Ge alloyed paste on Si is the desirable, simple, and high-speed process for epitaxial growth of SiGe, which could be potentially used as the lattice-matched virtual substrate with III–V semiconductors.

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Fabrication of Si1-xGex layer on Si substrate by Screen-Printing

Cited by 8 publications

References 4 publications

Effect of annealing ambient on SiGe layer formation using Al–Ge paste for III–V solar cell application

Effect of annealing ambient on SiGe layer formation using Al–Ge paste for III–V solar cell application

Performance Analysis and Simulation of c-Si/SiGe Based Solar Cell

Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate

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