Si junctions by surface activated bonding (SAB) method and investigated the effects of the annealing process on the electrical properties of the junctions by measuring their current -voltage (I-V) characteristics. It was found that the leakage current of the reverse bias voltage in the bonded Al/n-Si junctions significantly decreased and the interface resistance of the bonded Al/p-Si junctions dramatically decreased with the annealing temperature. The smallest interface resistances of the bonded Al/p + -Si and Al/n + -Si junctions were obtained to be 0.021 and 0.032 • cm 2 , after annealing at 300 and 400 • C, respectively. We demonstrated the fabrication of Al foil mesa-structures and micro wiring with complex structures on Si substrates. The sheet resistance of the bonded micro wiring was found to be more than two orders of magnitude lower than that of the evaporated micro wiring. In addition, Al foil mesa structures revealed a good thermal stability at the annealing temperature lower than 600 • C. These results indicated that the fabrication of the thick metal electrode in devices could be realized by SAB.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.