Electrical characteristics of Al foil/Si junctions by surface activated bonding method

Furuna, Katsuya; Liang, Jianbo; Shigekawa, Naoteru; Matsubara, Moeko; Dhamrin, M.; Nishio, Y.

doi:10.1109/imfedk.2016.7521694

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…On way to circumvent these difficulties is surfaceactivated bonding (SAB) (5,6), in which different substrate materials could be directly bonded to each other without heating. We previously successfully fabricated p-Si/Al junctions and found that the current-voltage characteristics of the junctions revealed Schottky properties (7). The formation of Ohmic contact frequently requires a high temperature step so that the evaporated metals could alloy with the semiconductor to reduce the barrier height of the interface.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Thick Metal Ohmic Contact Fabrication Using Surface Activated Bonding

Liang¹,

Furuna²,

Matsubara³

et al. 2016

ECS Trans.

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junctions by surface activated bonding (SAB). The effects of the annealing temperature process on the electrical properties of the junctions were investigated by measuring their current voltage (I-V) characteristics. It was found that the leakage current of the reverse bias of n-Si/Al junctions was improved and the I-V characteristics of p-Si/Al revealed excellent linearity properties after the junctions annealing at 400 °C. The interface resistance of p +-Si/Al, and n +-Si/Al junctions decreased with increasing annealing temperature and decreased to 0.021 and 0.032 Ω•cm 2 after the junction annealing at 300 and 400 °C, respectively. These results demonstrated that thick metal Ohmic contact in devices could be realized by SAB.

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Section: Introductionmentioning

confidence: 99%

Ultra-Thick Metal Ohmic Contact Fabrication Using Surface Activated Bonding

Liang¹,

Furuna²,

Matsubara³

et al. 2016

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…We previously successfully fabricated Al/p-Si junctions by SAB and found that the current-voltage (I-V) characteristics of the bonded junctions revealed Schottky rectifying property. 7,8 The formation of ohmic contact generally requires a heat-treatment process so that the evaporated metals could react with the semiconductor to reduce the barrier height of the interface. Thus, to investigate the annealing temperature dependence of the electrical properties of the bonded Al/Si junctions is very necessary to realize the fabrication of the thick film metal electrode.…”

mentioning

confidence: 99%

Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices

Liang

Furuna

Matsubara

et al. 2017

ECS J. Solid State Sci. Technol.

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Si junctions by surface activated bonding (SAB) method and investigated the effects of the annealing process on the electrical properties of the junctions by measuring their current -voltage (I-V) characteristics. It was found that the leakage current of the reverse bias voltage in the bonded Al/n-Si junctions significantly decreased and the interface resistance of the bonded Al/p-Si junctions dramatically decreased with the annealing temperature. The smallest interface resistances of the bonded Al/p + -Si and Al/n + -Si junctions were obtained to be 0.021 and 0.032 • cm 2 , after annealing at 300 and 400 • C, respectively. We demonstrated the fabrication of Al foil mesa-structures and micro wiring with complex structures on Si substrates. The sheet resistance of the bonded micro wiring was found to be more than two orders of magnitude lower than that of the evaporated micro wiring. In addition, Al foil mesa structures revealed a good thermal stability at the annealing temperature lower than 600 • C. These results indicated that the fabrication of the thick metal electrode in devices could be realized by SAB.

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Electrical characteristics of Al foil/Si junctions by surface activated bonding method

Cited by 2 publications

References 3 publications

Ultra-Thick Metal Ohmic Contact Fabrication Using Surface Activated Bonding

Ultra-Thick Metal Ohmic Contact Fabrication Using Surface Activated Bonding

Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices

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