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Arctic coastal evolution is the result of interactions between exogenic and endogenic processes. In the arctic region, this evolution differs from that in other areas of the world's oceans as a result of interactions between modern wave and ice factors, and the influences of glaciations and large-scale sea level changes in the past. Geologic structure, origin and development determine contemporary relief morphology. Morphology appears to be the most significant relief characteristic, but it is controlled by a set of interactive processes active over long periods. Our approach, in which a

Silicon-carbon films have been deposited on silicon and Al2O3/Cr-Cu substrates, making use of the electrolysis of methanol/dimethylformamide-hexamethyldisilazane (HMDS) solutions. The electrodeposited films were characterized by Raman spectroscopy and scanning electron microscopy, respectively. Moreover, the nucleation and growth mechanism of the films were studied from the experimental current transients.

In this study, we designed two types of gas-sensor chips with silicon–carbon film, doped with CuO, as the sensitive layer. The first type of gas-sensor chip consists of an Al2O3 substrate with a conductive chromium sublayer of ~10 nm thickness and 200 Ω/□ surface resistance, deposited by magnetron sputtering. The second type was fabricated via the electrochemical deposition of a silicon–carbon film onto a dielectric substrate with copper electrodes formed by photoelectrochemical etching. The gas sensors are sensitive to the presence of CO and CH4 impurities in the air at operating temperatures above 150 °C, and demonstrated p- (type-1) and n-type (type-2) conductivity. The type-1 gas sensor showed fast response and recovery time but low sensitivity, while the type-2 sensor was characterized by high sensitivity but longer response and recovery time. The silicon–carbon films were characterized by the presence of the hexagonal 6H SiC polytype with the impurities of the rhombohedral 15 R SiC phase. XRD analysis revealed the presence of a CuO phase.

Manganese-doped silicon-carbon films with a thickness about 100 nm were deposited on a silicon substrate by using the electrochemical route from the methanol, hexamethyldisilazane and manganese sulfate (CH3OH, (CH3)3-Si-NH-Si-(CH3)3 (HMDSN), MnSO4·5H2O) solution. At the first stage, the current density decreased from 51 mA/cm2 to less than 37 mA/cm2 with increasing the deposition time and slightly increased at the second stage when manganese sulfate was added. The analysis derived from the X-ray diffraction pattern indicates that Mn atoms interact with Si atoms and form mainly Mn5Si2 and Mn22,6Si5,4C4 phases.

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The development of the Arctic zone of Russia is associated with the development of a transport system that provides not only the export of raw materials, but also the delivery of construction materials, equipment and cargo to support existing industries. In turn, investment projects for the development of natural resources determine the requirements for the development of the transport system. For the first time, a schematic diagram and a map of the transport system of the Arctic zone (rail, water and road transport), including the main communication routes and transport hubs, are presented. The main points of formation of the cargo base of mineral resources have been determined. The interdependence of the development of the transport system and the development of mineral resources of the Arctic zone is indicated. It was concluded that the development of transport infrastructure that solves production tasks allows, among other things, to improve the quality of life of the local population and the connectivity of the territories.