The two-stage electrochemical deposition of a manganese-doped silicon-carbon film onto the silicon (100) substrate

Abstract

Manganese-doped silicon-carbon films with a thickness about 100 nm were deposited on a silicon substrate by using the electrochemical route from the methanol, hexamethyldisilazane and manganese sulfate (CH3OH, (CH3)3-Si-NH-Si-(CH3)3 (HMDSN), MnSO4·5H2O) solution. At the first stage, the current density decreased from 51 mA/cm2 to less than 37 mA/cm2 with increasing the deposition time and slightly increased at the second stage when manganese sulfate was added. The analysis derived from the X-ray diffraction pattern indicates that Mn atoms interact with Si atoms and form mainly Mn5Si2 and Mn22,6Si5,4C4 phases.

Investigation of Adsorption Kinetics on the Surface of a Copper-Containing Silicon–Carbon Gas Sensor: Gas Identification

“…A gas-sensitive layer was formed on interdigitated electrodes using the electrochemical deposition technique [47][48][49]. In the first stage, the deposition of the pure silicon-carbon film from methanol and hexamethyldisilazane (HMDSN) (ratio 9:1) solution was carried out for 40 min at 150 V. In the second stage, copper acetate (0.14 wt.%) was added to the electrolyte, and the film deposition continued for 5 min at 50 V. Finally, a methanol/HMDSN (ratio 9:1) solution was deposited onto the silicon-carbon film layer for 40 min at 150 V. Then, the films were annealed at 200 • C for 2 h. Interdigitated electrodes were formed via the vacuum vapor deposition of Cr/Cu/Cr (h Cr = 15 nm, h Cu = 2 µm) layers on the Al 2 O 3 substrate with the following laser demetallization (MicroSET-M Granite RA, Russia): step between electrodes-50 µm; electrode width-50 µm.…”