2019
DOI: 10.3390/nano9121754
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Electrochemical Deposition of Silicon-Carbon Films: A Study on the Nucleation and Growth Mechanism

Abstract: Silicon-carbon films have been deposited on silicon and Al2O3/Cr-Cu substrates, making use of the electrolysis of methanol/dimethylformamide-hexamethyldisilazane (HMDS) solutions. The electrodeposited films were characterized by Raman spectroscopy and scanning electron microscopy, respectively. Moreover, the nucleation and growth mechanism of the films were studied from the experimental current transients.

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Cited by 12 publications
(7 citation statements)
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“…The discharge curves of the SCF are non-linear, which confirms their pseudocapacitive nature. In the case of SCFs doped with manganese and nickel the presence of noticeable plateau (especially in the case of nickel) on the discharge curve indicates the occurrence of redox reactions in accordance with the CVA curves [27]. For " pure" SCF, there are no noticeable plateaus, which indicates that the primary process is the discharge of a double electric layer formed on the surface of the material during charging.…”
Section: Functional Characteristics Study and Simulationmentioning
confidence: 52%
See 1 more Smart Citation
“…The discharge curves of the SCF are non-linear, which confirms their pseudocapacitive nature. In the case of SCFs doped with manganese and nickel the presence of noticeable plateau (especially in the case of nickel) on the discharge curve indicates the occurrence of redox reactions in accordance with the CVA curves [27]. For " pure" SCF, there are no noticeable plateaus, which indicates that the primary process is the discharge of a double electric layer formed on the surface of the material during charging.…”
Section: Functional Characteristics Study and Simulationmentioning
confidence: 52%
“…Pure" SCF and SCF doped with metal atoms were obtained by the method of electrochemical deposition described in the papers [26,27]. The deposition was carried out on copper foil substrates 28 × 12 × 0.5 mm, mounted on the negative electrode.…”
mentioning
confidence: 99%
“…A gas-sensitive layer was formed on interdigitated electrodes using the electrochemical deposition technique [47][48][49]. In the first stage, the deposition of the pure silicon-carbon film from methanol and hexamethyldisilazane (HMDSN) (ratio 9:1) solution was carried out for 40 min at 150 V. In the second stage, copper acetate (0.14 wt.%) was added to the electrolyte, and the film deposition continued for 5 min at 50 V. Finally, a methanol/HMDSN (ratio 9:1) solution was deposited onto the silicon-carbon film layer for 40 min at 150 V. Then, the films were annealed at 200 • C for 2 h. Interdigitated electrodes were formed via the vacuum vapor deposition of Cr/Cu/Cr (h Cr = 15 nm, h Cu = 2 µm) layers on the Al 2 O 3 substrate with the following laser demetallization (MicroSET-M Granite RA, Russia): step between electrodes-50 µm; electrode width-50 µm.…”
Section: Methodsmentioning
confidence: 99%
“…The need for additional purification of electrolytic silicon by recrystallization methods in order to achieve semiconductor purity remains questionable. Recently, methods have been proposed for obtaining silicon and silicon-based materials by electrodeposition from ionic liquids and organic electrolytes [18,19]. These methods are of interest, although their industrial implementation will require large volumes of expensive reagents.…”
Section: Introductionmentioning
confidence: 99%