An Ultra high power MOS gate deviee IEGT has developed. A new pressure contact package has been designed considering the gate wiring to avoid current imbalance among chips. The Cu post is also designed to attain homogeneous pressure profile in the chip surface. The new package contains 42 IEGT and demonstrats high current turn-off over 6kA under 2.7kV DC bus voltage. 0-7803-7876-8/03617.00 Cg 2003 IEEE
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