ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
DOI: 10.1109/ispsd.2003.1225243
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Electrical and mechanical package design for 4.5kV ultra high power IEGT with 6kA turn-off capability

Abstract: An Ultra high power MOS gate deviee IEGT has developed. A new pressure contact package has been designed considering the gate wiring to avoid current imbalance among chips. The Cu post is also designed to attain homogeneous pressure profile in the chip surface. The new package contains 42 IEGT and demonstrats high current turn-off over 6kA under 2.7kV DC bus voltage. 0-7803-7876-8/03617.00 Cg 2003 IEEE

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Cited by 9 publications
(1 citation statement)
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“…Therefore, PPIs have been developed in recent years to replace thyristors and gate turn-off thyristors (GTOs) in traction systems [53], [54], large motor drives [55]- [57], power systems [58]- [60], and pulsed power applications [61]. The reliability record for press-pack devices is much higher than power modules largely due to a better tolerance to thermal cycling: the press pack allows double-sided cooling to lower the thermal impedance [56], [62].…”
Section: Package-related Failure Mechanismsmentioning
confidence: 99%
“…Therefore, PPIs have been developed in recent years to replace thyristors and gate turn-off thyristors (GTOs) in traction systems [53], [54], large motor drives [55]- [57], power systems [58]- [60], and pulsed power applications [61]. The reliability record for press-pack devices is much higher than power modules largely due to a better tolerance to thermal cycling: the press pack allows double-sided cooling to lower the thermal impedance [56], [62].…”
Section: Package-related Failure Mechanismsmentioning
confidence: 99%