A highly reliable press packed IGBT

Abstract

A newly developed press packed reverse conducting IGBT (RCIGBT), the ST1000EX21, having ratings of 2500 V and 1000 A, has successfully been introduced in high‐reliability application areas. A multiple‐chip press packed RCIGBT structure, containing IGBT chips and fast recovery diode (FRD) chips, has been achieved by using basic experimental results and a stress analysis using the finite element structure analysis program ABAQUS. Excellent electrical characteristics, especially a robust turn‐off capability, such as Ic = 5000 A, Vcp = 2800 V at Tj = 125 °C, have been obtained. High reliability, withstanding a thermal cycling (fatigue) test of more than 50,000 cycles and a high‐temperature voltage blocking test for 2000 hours, has been confirmed. The device is now available and is being successfully used for transportation systems and other applications that require high reliability and long‐term stability. Voltage and current ratings in IGBTs and IEGTs (Injection Enhanced Gate Transistors) will be raised in the future. © 2000 Scripta Technica, Electr Eng Jpn, 131(1): 78–85, 2000

Study of pressure balance for Press-Pack IGBTs and its influence on temperature distribution

“…The components (materials) from top to bottom are: heat sink on collector side (copper), collector (copper), collector molybdenum plate (molybdenum), IGBT chip (silicon), emitter molybdenum plate (molybdenum), pedestal (copper), emitter (copper) and heat sink on emitter side (copper). For the contact surface setting, the contact between the heat sink and the two electrodes is set to be Bonded, while other contact surfaces are set to be Frictional and the frictional coefficient is set to be 0.5 [18] . On the outer surface of the heat sink on collector side is the uniformly distributed clamping pressure, which is obtained from 12MPa multiplied by the total area of the chips.…”