Pressure contact assembly technology of high power devices

A newly developed press packed reverse conducting IGBT (RCIGBT), the ST1000EX21, having ratings of 2500 V and 1000 A, has successfully been introduced in highreliability application areas. A multiple-chip press packed RCIGBT structure, containing IGBT chips and fast recovery diode (FRD) chips, has been achieved by using basic experimental results and a stress analysis using the finite element structure analysis program ABAQUS. Excellent electrical characteristics, especially a robust turn-off capability, such as I c = 5000 A, V cp = 2800 V at T j = 125 °C, have been obtained. High reliability, withstanding a thermal cycling (fatigue) test of more than 50,000 cycles and a high-temperature voltage blocking test for 2000 hours, has been confirmed. The device is now available and is being successfully used for transportation systems and other applications that require high reliability and long-term stability. Voltage and current ratings in IGBTs and IEGTs (Injection Enhanced Gate Transistors) will be raised in the future. © 2000 Scripta Technica, Electr Eng Jpn, 131(1): 7885, 2000

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“…We carried out elastic-plastic analysis using the finite element structure analysis program ABAQUS [11]. Figure 3 shows the analyzed model.…”

Section: Stress Analysismentioning

confidence: 99%

A highly reliable press packed IGBT

Matsuda¹,

Kawamura²,

Hiyoshi³

et al. 2000

Elect. Eng. Jpn.

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“…However, a comprehensive understanding on the unique technical challenges for the design and fabrication of the PPIs is paramount, because the challenges are significantly different from those for wire‐bond modules or traditional pressure contact devices such as thyristors [6, 11–16]. In the challenges, electrical insulation capability of PPIs is one of the most critical challenges [6].…”

Section: Introductionmentioning

confidence: 99%

Partial discharge measurement and analysis in PPIs

Zhao

et al. 2019

IET Power Electronics

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Electrical insulation capability is one of the most critical challenges for press-pack insulated gate bipolar transistors (IGBTs), but the knowledge of its insulation failure mechanism is much less mature. To understand the insulation failure mechanism, partial discharge (PD) measurement and analysis in press-pack IGBT (PPI) submodule were performed in this study. A dedicated PD measurement system for PPIs was designed and fabricated, and fast oscilloscope, PD detector and ultraviolet (UV) image camera were employed to observe the PD. PD-induced insulation failure phenomenon in the submodule was observed under direct current voltage, and UV images indicated that the discharge occurred at the periphery of the die. Phase-resolved PD (PRPD) analysis method for PPIs was developed and three elementary structures were used to simulate the PD in the electric field reinforcement areas identified by electric field analysis. According to PRPD patterns, the observed PD in the submodule was considered to be mainly caused by a mismatch between the electric field and critical electric field on the surface of passivation layers of the die. The inference was verified at different gas pressures because a decrease of PD inception voltage in the submodule and the bare die was observed at lower gas pressure.

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“…High reliability and long-term stability are always critical issues and especially essential in high power applications. For example, according to [2], a 30-year lifetime, 338,000 long-term cycles, and 12 million shortterm temperature changes are required for traction applications. A scenario that is commonly used to explain the IGBT failure is the coefficient of the thermal expansion (CTE) mismatch between the silicon and copper base-plate in the thermal cycling.…”

Section: Introductionmentioning

confidence: 99%

“…The spike is a function of inductance and di/dt rate. How to deal with the parasitics effect will ultimately affect the EMI, efficiency, and performance of a circuit [2]. In layout design of IGBT packages and power stages with both high switching speed and high power handling requirements, reducing parasitics is extremely important.…”

Section: Introductionmentioning

confidence: 99%

P-cell and N-cell based IGBT module: Layout design, parasitic extraction, and experimental verification

Tolbert

Wang

et al. 2011

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper proposes a novel packaging method for power electronics modules based on the concepts of P-cell and N-cell. It can reduce the stray inductance in the current commutation path in a phase-leg module and hence improve the switching behavior. Two IGBT phase-leg modules, specifically a P-cell and N-cell based module and a conventional module are designed. Using Ansoft Q3D Extractor, electromagnetic simulation is carried out to extract the stray inductance from the two modules. Switching behavior with different package parasitics is studied based on Saber simulation. Two prototype phase-leg modules based on two different designs are fabricated. The parasitics are measured using a precision impedance analyzer. The measurement results agree with the simulation very well.

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Pressure contact assembly technology of high power devices

Cited by 29 publications

References 7 publications

A highly reliable press packed IGBT

A highly reliable press packed IGBT

Partial discharge measurement and analysis in PPIs

P-cell and N-cell based IGBT module: Layout design, parasitic extraction, and experimental verification

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