P-cell and N-cell based IGBT module: Layout design, parasitic extraction, and experimental verification

Li, Shengnan; Tolbert, Leon M.; Wang, Fred; Peng, Fang Zheng

doi:10.1109/apec.2011.5744623

Cited by 34 publications

(7 citation statements)

References 11 publications

(13 reference statements)

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“…The PLECS block set uses a behavioral model of IGBTs and diodes (including reverse recovery) which overcomes some of the limitations of standard SPICE models when used in power electronic applications [19]. The simplified circuit used in the simulation to analyse the turn-on and turn-off transients is shown in The values of the parasitic inductances were chosen based on experimental measurements (see Section V) and with reference to [15], [16], which list parasitic inductance values typical of commercial IGBT power modules. Component values used in the simulation model are listed in Table I.…”

Section: Simulation Resultsmentioning

confidence: 99%

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Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers

Rogers

Lakshmanan

2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper presents a low inductance snubber design incorporating a damped DC bus capacitance and multiple RC+RCD cells arranged in two arrays. The design suppresses transient over-voltage peaks seen at the switching transitions in hard-switched, high-frequency switch-mode circuits which are created by an unavoidable interaction between circuit parasitic inductances, IGBT turn-off current slopes and free-wheeling diode reverse recovery currents. The array arrangement allows the use of small surface-mount, ultrafast diodes by enforcing current sharing between many devices. An industrial application example is presented where the snubber design enables an increase in DC bus voltage from 200V to 400V when using 600V Si IGBTs operated at a switching frequency of 75 kHz. Simulation results are presented and compared to experimental measurements to illustrate the operating principle and effectiveness of the array design.Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers S 978-1-4799-6735-3/15/$31.00 ©2015 IEEE

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Section: Simulation Resultsmentioning

confidence: 99%

“…A snubber must be of very low inductance itself in order to have a maximum effect in reducing peak voltages generated by other circuit parasitic inductances [15], [16]. This may be illustrated by noting that an inductance of only 50 nH will cause a voltage drop of 125 V when exposed to a 40 ns, 100 A switching edge.…”

Section: A Pcb Layout and Component Selectionmentioning

confidence: 97%

Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers

Rogers

Lakshmanan

2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…Power electronics circuits can be constructed with two basic switching cells defined as P-cell and N-cell [16] [17], as shown in Fig. 2.…”

Section: A Bidirectional Dual Buck-boost Voltage Balancermentioning

confidence: 99%

A Bidirectional Dual Buck-Boost Voltage Balancer with Direct Coupling Based on a Burst-Mode Control Scheme for Low-Voltage Bipolar-Type DC Microgrids

Liu¹,

Zhu²,

Jia³

et al. 2015

Journal of Power Electronics

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DC microgrids are considered as prospective systems because of their easy connection of distributed energy resources (DERs) and electric vehicles (EVs), reduction of conversion loss between dc output sources and loads, lack of reactive power issues, etc. These features make them very suitable for future industrial and commercial buildings' power systems. In addition, the bipolar-type dc system structure is more popular, because it provides two voltage levels for different power converters and loads. To keep voltage balanced in such a dc system, a bidirectional dual buck-boost voltage balancer with direct coupling is introduced based on P-cell and N-cell concepts. This results in greatly enhanced system reliability thanks to no shoot-through problems and lower switching losses with the help of power MOSFETs. In order to increase system efficiency and reliability, a novel burst-mode control strategy is proposed for the dual buck-boost voltage balancer. The basic operating principle, the current relations, and a small-signal model of the voltage balancer are analyzed under the burst-mode control scheme in detail. Finally, simulation experiments are performed and a laboratory unit with a 5kW unbalanced ability is constructed to verify the viability of the bidirectional dual buck-boost voltage balancer under the proposed burst-mode control scheme in low-voltage bipolar-type dc microgrids.

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“…Though , duration of the peak is short , it is crucial for the IGBT. Due to the capacitance , the dVe e!dt is high as shown in mathematical relation (2) . As shown in Figure 6 , when the turn-off process starts V GE is active clamped nearly to 3.2V voltage for 1.6�s to reduce the dVee!dt during turn-off from time t, to t2.…”

Section: Turn-off Transientsmentioning

confidence: 99%

A real time V<inf>ce</inf> measurement issues for high power IGBT module in converter operation

Ghimire

Vega

Munk‐Nielsen

et al. 2013

2013 1st International Future Energy Electronics Conference (IFEEC)

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A real time on-state collector-emitter (VeJ voltage monitoring is sensitive due to a stray inductance and a parasitic capacitance inside high power IGBT modules. An additional circuit used to monitor the on-state Vee introduces small current into the module. Though the current is low in comparison to the converter current, the effect on gate driving signals cannot be neglected during worst case switching operations. The worst case situation is occurred during turn-on and turn-off period of the switches at low on-time of the IGBT. Furthermore, during this period, when the common terminal of the measurement circuit is not in contact properly, the consequences of the error will be higher by deteriorating the gate driving signals. This type of error may occur due to the vibration or during implementation of the measurement circuit in the converter. This paper presents the influence of the error into the measurement and shows the measurement of current and voltage transients during the converter operation. The selection of the components for the measurement circuit is also discussed. The effect in gate driving signals with and without the error events are presented. Finally, a real time Vee measurement of IGBT module in the converter operation is presented.I.

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P-cell and N-cell based IGBT module: Layout design, parasitic extraction, and experimental verification

Cited by 34 publications

References 11 publications

Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers

Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers

A Bidirectional Dual Buck-Boost Voltage Balancer with Direct Coupling Based on a Burst-Mode Control Scheme for Low-Voltage Bipolar-Type DC Microgrids

A real time V<inf>ce</inf> measurement issues for high power IGBT module in converter operation

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