Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers

Rogers, Daniel; Lakshmanan, Padmavathi

doi:10.1109/apec.2015.7104711

Cited by 4 publications

(3 citation statements)

References 23 publications

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“…Oftentimes the gate bias voltage was increased by about 0.1 volt to obtain minimum harmonics. In the latter case, the power output would drop by about 5-10% [10][11][12].…”

Section: Switchingmosfetscomparedmentioning

confidence: 97%

Switch-Mode MOSFETs for Class A Radio Frequency Amplification

Motsenbocker

2023

IJMET

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Vertical double diffused MOSFETs (“VDMOSFETs”) developed for switching power supplies were successfully used in high voltage, high frequency linear amplifier circuits. These high voltage power switches are surprisingly useful for linear RF power amplifiers and transmitters. In most of their intended applications such as in switching power supplies or switched digital amplifiers, VDMOSFETs are pulsed by a high voltage and the pulsed output is heavily filtered. This avoids the linear region of the VDMOSFET, which normally limits the efficiency to a theoretical maximum of 25%. However, in a search of MOSFETs for high voltage linear amplification using Class A bias without heavy use of filtering, these low-cost switching MOSFETs were found to work best, if limited to radio frequencies above 1.5 MHz. Conditions, and in particular, very low impedance driving of the MOSFET gate, were discovered that gave efficiencies of 70%, rivaling that of non-linear pulse techniques such as Class C or Class D operation. The beneficial effect of linear operation combined with high efficiency at a high voltage is suggested to arise from Miller capacitance. This was only seen at radio frequencies and with the larger current, higher gate capacitance devices. Switching MOSFETs as described here should be considered alongside dedicated RF MOSFETs such as the more expensive LD (lateral diffused) MOSFET when working with RF power.

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“…Oftentimes the gate bias voltage was increased by about 0.1 volt to obtain minimum harmonics. In the latter case, the power output would drop by about 5-10% [10][11][12].…”

Section: Switchingmosfetscomparedmentioning

confidence: 97%

Switch-Mode MOSFETs for Class A Radio Frequency Amplification

Motsenbocker

2023

IJMET

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“…The In order to achieve high di/dt, the stray inductance of the test circuit must be minimized. Hence, a laminated bus-bar structure was designed to connect the capacitors [19][20][21] . The charging resistor (R C ) was used to charge up the 133 μF capacitor bank (C bank ) to the DC bus voltage.…”

Section: Pulsed Power Applicationmentioning

confidence: 99%

Experimental comparison of SiC GTO and ETO for pulse power applications

Zhou

Deng

et al. 2018

J. Semicond.

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Silicon carbide (SiC) emitter turn-off thyristors (ETOs) are very promising high power capacity semiconductor devices for high voltage and high power density power systems and pulse power applications. However, reports on comparison of high voltage SiC GTOs and ETOs in pulse power applications have been rare. In this paper, a comprehensive study on a 6.5 kV SiC GTO and ETO are carried out to demonstrate the superior performance of the SiC ETO over the GTO in pulse power application. A 6.5 kV SiC ETO was designed and tested with a printed circuit board (PCB) integrated gate driver. The forward conduction characteristics of the SiC ETO and GTO in elevated temperatures are measured and compared, showing the excellent temperature coefficient of the SiC ETO's output characteristics. Their turn-off characteristics with resistive load are measured and compared, demonstrating that the SiC ETO has much faster switching speed and smaller turn-off loss. Experimental results demonstrate that the SiC ETO has a better performance, especially with respect to its switching characteristics, making it a very competitive candidate for high power and pulse power applications.

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“…High-power Class-D amplifiers (CDAs) have been studied for the applications that require high switching frequency and high-power handling capability, such as industrial vibration test systems, electromagnetic interference test systems, and current control systems for magnetic resonance imaging scanners [1], [2]. As one of research hot-spots, Class-D amplifiers are widely investigated.…”

Section: Introductionmentioning

confidence: 99%

An Improved Hysteresis Voltage Mode of Synchronous Rectifier Buck Circuit

Shen

Zhong

2020

IEEE Access

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To achieve high power and high efficiency over a wide load range, an improved hybrid hysteresis voltage mode for Buck circuit is proposed in this paper. The strategy and workflow of the proposed improved hybrid hysteresis voltage mode are demonstrated step by step. The output voltage performance of the Buck circuit with proposed hysteresis voltage mode is compared with the same circuit with typical hysteresis voltage mode. Numerical simulation results show that with the introduction of the PD link, the overshoot can be completely controlled or eliminated; with the introduction of the dynamic voltage reference, the static difference can be completely negligible; relatively stable input voltage improves its steady-state working frequency and the electromagnetic interference significantly. Thus, the proposed control strategy can not only achieve satisfied performance, but also provide a basis for further design and optimization. INDEX TERMS Buck circuit, Hysteresis voltage mode, Ripple elimination, Static difference.

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Low-inductance snubber arrays for high-power, high-bandwidth switch-mode amplifiers

Cited by 4 publications

References 23 publications

Switch-Mode MOSFETs for Class A Radio Frequency Amplification

Switch-Mode MOSFETs for Class A Radio Frequency Amplification

Experimental comparison of SiC GTO and ETO for pulse power applications

An Improved Hysteresis Voltage Mode of Synchronous Rectifier Buck Circuit

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