The temperature-dependent circuit modeling and performance in terms of propagation delay, power dissipation, and crosstalk-induced voltage waveform at the far end of victim line of multilayer graphene nanoribbon (MLGNR) interconnects have been analyzed at 22 nm technology node. A comparative performance analysis between MLGNR interconnects with resistance estimated using temperature-dependent model and temperature-independent model is examined. The results obtained are also compared with capacitively coupled interconnects of copper (Cu). The results show that as the temperature is varied from 300 K to 500 K, MLGNR has lower propagation delay and power dissipation as compared to Cu for 1 mm long interconnects. It is also observed that because of the dominance of both low resistance and ground capacitance compared to Cu, MLGNR has better crosstalk-induced delay and voltage waveforms with rise in temperature at the far end of aggressor and victim line, respectively. Further, simulated results show an average relative improvement in propagation delay of 37.24% and corresponding improvement in power dissipation of approximately 19.59% by using a temperature-dependent model in comparison to a temperature-independent model of MLGNR resistance with interconnect lengths varying from 200 to 1000 μm. The reduction in the time duration of victim output pulse over these interconnect lengths also shows a significant improvement of approximately 35% by using temperature-dependent model as against temperature-independent model of MLGNR resistance.

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The temperature‐dependent, crosstalk‐induced, noise voltage waveform and its frequency spectrum, in capacitive coupled single‐walled carbon nanotube (SWCNT) bundle interconnects, at the far end of victim line, have been analyzed at 22‐nm technology node. A similar analysis is performed for copper interconnects and a comparison is made between the results of these two analyses. The SPICE simulation results reveal that at temperature variations ranging from 300 to 500 K, compared with conventional metal (copper) conductors, crosstalk noise voltage levels in CNT, at the far end of victim line, are significantly low. Simulated results further reveal that, with rise in interconnect temperatures, compared with copper interconnects, coupled interconnects of SWCNT bundle filter more noise frequency components. Based on these comparative results, an improved model for extracting inter‐bundle, real life, coupling capacitances between SWCNT bundles has been proposed. Copyright © 2014 John Wiley & Sons, Ltd.

This paper address the influence of tube diameter on single walled carbon nanotube (CNT) bundle interconnect delay and power output in Very Large Scale application. We find that single‐walled carbon nanotube (SWCNT) bundle interconnects are of lower delay than copper interconnect due to low resistance and inductance. Power dissipation decreases with increase in tube diameter of the constituent SWCNT. CNT interconnect resistance and inductance increases with increase in tube diameter. On the other hand, with increase in tube diameter interconnect capacitance decreases. There is a trade off between delay and power dependence on tube diameter.

which can further degrade the interconnect performance. Hence, the increase in resistivity due to scaling is further aggravated by rough surfaces of Cu interconnect. [5,6] As a result of the issues faced by conventional Cu interconnects, researchers are on a quest to find a suitable candidate for very large scale integration (VLSI) on-chip interconnects. Cu-based materials like Cu-carbon nanotube (Cu-CNT) composite, [7] Cu-Graphene hybrid, [8] and Cu-Carbon hybrid [9] have been proposed as possible substitutes for Cu interconnects. Although, it is worth noting that the related fabrication of Cubased materials faces many challenges like achieving uniform CNT-Cu distribution, compatibility with complementary metal oxide semiconductor (CMOS) technology, and lack of a fully developed fabrication process. [7][8][9] In recent years, 1D carbonbased nanomaterials like CNTs and graphene nanoribbons (GNRs) are of significant interest in various applications like electronic devices, VLSI on-chip interconnects, through silicon via (TSVs) for 3D ICs, sensors, optics, medicine, mechanics, spintronics and energy storage devices, owing to their exceptional electronic, optical, thermal, and mechanical properties. [10][11][12] Moreover, both GNRs and CNTs show higher current densities, electrical and thermal conductivities than Cu. [13] Hence, researchers proposed GNRs and CNTs as emerging alternatives to conventional Cu for VLSI on-chip interconnects. [13][14][15][16] GNRs having planar structures are more consistent with the semiconductor industry's fabrication technology, [17,18] making GNRs preferable to CNTs.GNRs are classified into single-layer (SLGNR) and multilayer (MLGNR) GNR, where SLGNR with a single layer of GNR has very high intrinsic resistance. Hence, to achieve lower resistance and better performance, MLGNR is proposed in which multiple GNR layers are stacked on top of one another. [19,20] The MLGNRs can be further classified based on the contact formed between metal and MLGNR, i.e., top-contact (TC-MLGNR) and side-contact (SC-MLGNR) MLGNR. SC-MLGNR has lower resistance as all the layers are physically coupled to metal contacts, whereas only the topmost layer forms a connection with the metal contact in TC-MLGNR, leading to its inferior performance. However, in the present scenario, fabrication of TC-MLGNR is less challenging and practically feasible than SC-MLGNR. [19,20] TC-MLGNRs

Multilayer graphene nanoribbon (MLGNR) is a potential candidate in nanoscale very large scale integration (VLSI) interconnects. A detailed analysis emphasizing the impact of GNR's edge shape in an armchair (ac) and zigzag (zz) structures on crosstalk performance considering undoped and doped (intercalated with AsF 5 and FeCl 3 ) MLGNR interconnects is presented. A capacitively-coupled driver-interconnect-load (DIL) line configuration is used to analyze both the functional and dynamic crosstalk at 14 nm technology node for global interconnects. A temperature-dependent equivalent single conductor (TD-ESC) model is considered. It is observed that over a temperature range from 300 to 500 K, crosstalk-induced low noise peaks in doped MLGNRs are obtained with zz-edges as compared with undoped MLGNR, whereas, the time duration of crosstalk-induced noise is small for doped MLGNRs with ac-edges. Similar findings are obtained in terms of propagation delay and crosstalk-induced delay for single and coupled interconnects, respectively, that is, the delays obtained in both kinds are small for doped MLGNR with ac-edges. It is also observed that AsF 5 -doped MLGNR outperforms FeCl 3 -doped MLGNR in terms of crosstalk-induced noise and delay. The results of MLGNR are also compared with the mixed carbon-nanotube bundle (MCB).