Temperature dependant crosstalk analysis in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

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The temperature-dependent circuit modeling and performance in terms of propagation delay, power dissipation, and crosstalk-induced voltage waveform at the far end of victim line of multilayer graphene nanoribbon (MLGNR) interconnects have been analyzed at 22 nm technology node. A comparative performance analysis between MLGNR interconnects with resistance estimated using temperature-dependent model and temperature-independent model is examined. The results obtained are also compared with capacitively coupled interconnects of copper (Cu). The results show that as the temperature is varied from 300 K to 500 K, MLGNR has lower propagation delay and power dissipation as compared to Cu for 1 mm long interconnects. It is also observed that because of the dominance of both low resistance and ground capacitance compared to Cu, MLGNR has better crosstalk-induced delay and voltage waveforms with rise in temperature at the far end of aggressor and victim line, respectively. Further, simulated results show an average relative improvement in propagation delay of 37.24% and corresponding improvement in power dissipation of approximately 19.59% by using a temperature-dependent model in comparison to a temperature-independent model of MLGNR resistance with interconnect lengths varying from 200 to 1000 μm. The reduction in the time duration of victim output pulse over these interconnect lengths also shows a significant improvement of approximately 35% by using temperature-dependent model as against temperature-independent model of MLGNR resistance.

Section: Crosstalk Analysismentioning

confidence: 83%

Section: Crosstalk Analysismentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

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Crosstalk noise analysis in ternary logic multilayer graphene nanoribbon interconnects using shielding techniques

Kolanti¹,

Rao²

2020

This paper presents an accurate structure for multilayer graphene nanoribbon (MLGNR) bundled interconnects to reduce the effects of crosstalk in ternary logic circuits. In the proposed structures, the signal line is surrounded by the shielding lines to reduce the crosstalk effects. The crosstalk effects such as noise peak, noise area, delay, and power consumptions are compared to effects produced by conventional methods. The impacts of process variation in the proposed structures are also presented. Additionally, the proposed MLGNR interconnect results are compared with the carbon nanotube interconnections. All the proposed circuits are implemented and simulated using HSPICE tool. The simulation results indicated that the passively shielded MLGNR interconnects provide lower crosstalk effects up to 47.7% and 69.4%, respectively, over the active and without shielded interconnects. K E Y W O R D S active and passive shieldings, crosstalk, multilayer graphene nanoribbon, ternary logic 1 | INTRODUCTION Traditionally, copper is promising interconnect material used in very large scale integrated (VLSI) circuits. Due to shrinking the VLSI technology into nanometer, it is needed to scale the dimensions of Cu on-chip interconnects. Scaling the Cu dimensions has created the surface and grain boundary scatterings that increases the interconnect resistance and capacitance. Additionally, the effects such as electromigration, skin effect, small mean free path (MFP), less electrical and thermal conductivity, stress, and process variability issues affect the Cu interconnect performance. Thus, researchers found alternative technologies such as carbon nanotubes (CNTs) 1,2 and graphene nanoribbons (GNRs). 3,4 With the invention by Iijima, 5 researchers are attracted to CNTs because of their superior properties such as capability of carrying large currents, large thermal conductivity, and mechanical strength. 6 The shape of the CNTs can be roll of hollow graphene sheets in tube shape, thus it is referred as CNTs. The CNTs act either as semiconductor or conductor depending on the rolling angle, i.e., chirality. Based on the physical properties, CNTs can be categorized as singlewalled CNTs (SWCNTs) and multi-walled CNTs (MWCNTs). As the name depicts, the SWCNT is a single rolled sheet of graphene has radius ranges from 0.2 to 2 nm, while the MWCNT contains multiple concentric SWCNTs. The SWCNTs can be utilized as channel in field-effect transistors (FETs) as well as the metal in on-chip interconnects. 7 But the MWCNT suits only for implementing the interconnects because of its larger diameter. Meanwhile, in on-chip interconnects, MWCNTs provide better performance over the SWCNTs as they have more conducting shells, large MFP, low resistance, and large ballistic transport. 8,9

Effect of temperature and single event transient on crosstalk in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

Liu

Li²,

et al. 2021

Although they have better electrical and thermal properties, thermal issues have become an important challenge to design modern integrated circuits with single-walled carbon nanotube (SWCNT) bundle interconnects. The equivalent RLC model for SWCNT bundle interconnect is analyzed. Based on the proposed circuit for single event crosstalk (SEC), the influences of the length of line, nanotube diameter, metallic nanotube ratio, and technology node on SEC at different temperatures are studied. The potential impact mechanisms are also discussed. The simulation results show that, compared with one in copper line, peak voltage and pulse width of SEC in SWCNT interconnect are reduced by an average of 23.7% and 8.8%, respectively. The larger the diameter of SWCNT is or the more the ratio of metallic SWCNT is, the weaker the effect of SEC will be. With the increase of the length of line, the crosstalk effect will increase. The pulse width of SEC is more sensitive to the temperature when the length of line is longer. However, the peak voltage is more sensitive to the temperature when the length of line is shorter. As the technology node shrinks from 21 nm to 9.5 nm, the noise area of SEC increases from 0.55 V•ns to 1.89 V•ns, which results in that the crosstalk action time increases significantly.