Performance analysis of multilayer graphene nanoribbon (MLGNR) interconnects

Kumar, Mayank; Chatterjee, Amitabh; Sarkar, S.; Kaushik, Brajesh Kumar

doi:10.1007/s10825-015-0786-x

Cited by 25 publications

(27 citation statements)

References 27 publications

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“…capacitance and inductance are obtained from appropriate expressions available in several studies 7,11,12,15,16 and tabulated in Table 2. The other circuit parameters per unit length of MLGNR interconnect viz.…”

Section: Temperature-dependent Circuit Modeling Of Mlgnrmentioning

confidence: 99%

“…7,11,16 The per unit length quantum capacitance (C q ) and the electrostatic capacitance (C e ) of MLGNR are given by Equations 13 and 14, respectively, 7,11,16 The per unit length quantum capacitance (C q ) and the electrostatic capacitance (C e ) of MLGNR are given by Equations 13 and 14, respectively,…”

Section: Temperature-dependent Circuit Modeling Of Mlgnrmentioning

confidence: 99%

“…11,12,16 The kinetic inductance (L k ) is the kinetic energy stored in each conducting channel of the GNR. GNR has kinetic inductance (L k ) in addition to magnetic inductance (L m ).…”

Section: Temperature-dependent Circuit Modeling Of Mlgnrmentioning

confidence: 99%

“…This simulation setup is used with optimum number of repeaters. 16,21,36,37 A power dissipation ratio (MLGNR/Cu) for long (~1 mm) interconnect with rise in temperature, ranging from 300 K to 500 K, is illustrated in Figure 8 at 22 nm technology node. Copper-interconnect propagation delay and power dissipation are used to normalize corresponding MLGNR-interconnect propagation delays and powers, respectively.…”

Section: Delay and Power Analysismentioning

confidence: 99%

“…Presently, overall power is dramatically increasing with scaling of technology in DSM region. 16 Moreover, Table 3 exhibits that, in comparison to a temperature-independent model of MLGNR resistance, 16 the average relative improvement in delay and power dissipation achieved is approximately 37.24% and 19.59%, respectively, using temperature-dependent model with interconnect lengths varying from 200 to 1000 μm. 16,21,36,37 A power dissipation ratio (MLGNR/Cu) for long (~1 mm) interconnect with rise in temperature, ranging from 300 K to 500 K, is illustrated in Figure 8 at 22 nm technology node.…”

Section: Delay and Power Analysismentioning

confidence: 99%

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Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

Circuit Theory & Apps

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The temperature-dependent circuit modeling and performance in terms of propagation delay, power dissipation, and crosstalk-induced voltage waveform at the far end of victim line of multilayer graphene nanoribbon (MLGNR) interconnects have been analyzed at 22 nm technology node. A comparative performance analysis between MLGNR interconnects with resistance estimated using temperature-dependent model and temperature-independent model is examined. The results obtained are also compared with capacitively coupled interconnects of copper (Cu). The results show that as the temperature is varied from 300 K to 500 K, MLGNR has lower propagation delay and power dissipation as compared to Cu for 1 mm long interconnects. It is also observed that because of the dominance of both low resistance and ground capacitance compared to Cu, MLGNR has better crosstalk-induced delay and voltage waveforms with rise in temperature at the far end of aggressor and victim line, respectively. Further, simulated results show an average relative improvement in propagation delay of 37.24% and corresponding improvement in power dissipation of approximately 19.59% by using a temperature-dependent model in comparison to a temperature-independent model of MLGNR resistance with interconnect lengths varying from 200 to 1000 μm. The reduction in the time duration of victim output pulse over these interconnect lengths also shows a significant improvement of approximately 35% by using temperature-dependent model as against temperature-independent model of MLGNR resistance.

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Section: Temperature-dependent Circuit Modeling Of Mlgnrmentioning

confidence: 99%

Section: Temperature-dependent Circuit Modeling Of Mlgnrmentioning

confidence: 99%

“…11,12,16 The kinetic inductance (L k ) is the kinetic energy stored in each conducting channel of the GNR. GNR has kinetic inductance (L k ) in addition to magnetic inductance (L m ).…”

Section: Temperature-dependent Circuit Modeling Of Mlgnrmentioning

confidence: 99%

Section: Delay and Power Analysismentioning

confidence: 99%

Section: Delay and Power Analysismentioning

confidence: 99%

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Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

Circuit Theory & Apps

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Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

Kaur

Kumar

Khanna

2019

Physica Status Solidi (a)

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Multilayer graphene nanoribbon (MLGNR) is a potential candidate in nanoscale very large scale integration (VLSI) interconnects. A detailed analysis emphasizing the impact of GNR's edge shape in an armchair (ac) and zigzag (zz) structures on crosstalk performance considering undoped and doped (intercalated with AsF 5 and FeCl 3 ) MLGNR interconnects is presented. A capacitively-coupled driver-interconnect-load (DIL) line configuration is used to analyze both the functional and dynamic crosstalk at 14 nm technology node for global interconnects. A temperature-dependent equivalent single conductor (TD-ESC) model is considered. It is observed that over a temperature range from 300 to 500 K, crosstalk-induced low noise peaks in doped MLGNRs are obtained with zz-edges as compared with undoped MLGNR, whereas, the time duration of crosstalk-induced noise is small for doped MLGNRs with ac-edges. Similar findings are obtained in terms of propagation delay and crosstalk-induced delay for single and coupled interconnects, respectively, that is, the delays obtained in both kinds are small for doped MLGNR with ac-edges. It is also observed that AsF 5 -doped MLGNR outperforms FeCl 3 -doped MLGNR in terms of crosstalk-induced noise and delay. The results of MLGNR are also compared with the mixed carbon-nanotube bundle (MCB).

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Prospective Incorporation of Booster in Carbon Interconnects for High-Speed Integrated Circuits

Pathade

Agrawal

Parekh

et al. 2020

Lecture Notes in Electrical Engineering

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Performance analysis of multilayer graphene nanoribbon (MLGNR) interconnects

Cited by 25 publications

References 27 publications

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

Prospective Incorporation of Booster in Carbon Interconnects for High-Speed Integrated Circuits

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