Influence of tube diameter on carbon nanotube interconnect delay and power output

Abstract

This paper address the influence of tube diameter on single walled carbon nanotube (CNT) bundle interconnect delay and power output in Very Large Scale application. We find that single‐walled carbon nanotube (SWCNT) bundle interconnects are of lower delay than copper interconnect due to low resistance and inductance. Power dissipation decreases with increase in tube diameter of the constituent SWCNT. CNT interconnect resistance and inductance increases with increase in tube diameter. On the other hand, with increase in tube diameter interconnect capacitance decreases. There is a trade off between delay and power dependence on tube diameter.

Temperature dependant crosstalk analysis in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

“…For this densely packed bundle, the inter‐CNT distance( x ) is equivalent to tube diameter ( d = 1 nm). The effective resistance of a SWCNT bundle of length L > λ is given by Eq . …”

Carbon Nanotube as a VLSI Interconnect

“…Since, L k >>L M , inclusion of L M does not have significant impact on the delay model for interconnects. Fig.3.4 and 3.5, shows the equivalent Circuits of an SWCNT-bundle for L<L0 and L>L0 [29][30][31][32][33]. Where L is bundle length.…”

“…Where L is bundle length. The resistances, inductances and capacitances of a bundle can be obtained from the following expressions [29][30][31][32][33]. The CNT bundle resistance is given by (3.6) and (3.7), where H is thickness and w is the width of CNT bundle interconnect, and n CNT is the total number of CNTs in the bundle.…”

“…The impedance parameters of a SWCNT bundle are calculated from (3.6) -(3.13) [33]. Table-3.2, shows the data used for these calculations [33].…”

“…Thus, reduction of interconnect power dissipation by increasing tube diameter should be possible. Variation of equivalent resistance with diameters at different interconnect lengths for 22nm technology node [33].…”