Nanostructured composites containing aligned carbon nanotubes (CNTs) are very promising as interface materials for electronic systems and thermoelectric power generators. We report the first data for the thermal conductivity of densified, aligned multiwall CNT nanocomposite films for a range of CNT volume fractions. A 1 vol % CNT composite more than doubles the thermal conductivity of the base polymer. Denser arrays (17 vol % CNTs) enhance the thermal conductivity by as much as a factor of 18 and there is a nonlinear trend with CNT volume fraction. This article discusses the impact of CNT density on thermal conduction considering boundary resistances, increased defect concentrations, and the possibility of suppressed phonon modes in the CNTs.

The extremely high thermal conductivities of carbon nanotubes have motivated a wealth of research. Progress includes innovative conduction metrology based on microfabricated platforms and scanning thermal probes as well as simulations exploring phonon dispersion and scattering using both transport theory and molecular dynamics. This article highlights these advancements as part of a detailed review of heat conduction research on both individual carbon nanotubes and nanostructured films consisting of arrays of nanotubes or disordered nanotube mats. Nanotube length, diameter, and chirality strongly influence the thermal conductivities of individual nanotubes and the transition from primarily diffusive to ballistic heat transport with decreasing temperature. A key experimental challenge, for both individual nanotubes and aligned films, is the separation of intrinsic and contact resistances. Molecular dynamics simulations have studied the impacts of specific types of imperfections on the nanotube conductance and its variation with length and chirality. While the properties of aligned films fall short of predictions based on individual nanotube data, improvements in surface engagement and postfabrication nanotube quality are promising for a variety of applications including mechanically compliant thermal contacts.

Owing to their high thermal conductivities, carbon nanotubes (CNTs) are promising for use in advanced thermal interface materials. While there has been much previous research on the properties of isolated CNTs, there are few thermal data for aligned films of single wall nanotubes. Furthermore, such data for nanotube films do not separate volume from interface thermal resistances. This paper uses a thermoreflectance technique to measure the volumetric heat capacity and thermal interface resistance and to place a lower bound on the internal volume resistance of a vertically aligned single wall CNT array capped with an aluminum film and palladium adhesion layer. The total thermal resistance of the structure, including volume and interface contributions, is 12m2KMW−1. The data show that the top and bottom interfaces of the CNT array strongly reduce its effective vertical thermal conductivity. A low measured value for the effective volumetric heat capacity of the CNT array shows that only a small volume fraction of the CNTs participate in thermal transport by bridging the two interfaces. A thermal model of transport in the array exploits the volumetric heat capacity to extract an individual CNT-metal contact resistance of 10m2K1GW−1 (based on the annular area Aa=πdb), which is equivalent to the volume resistance of 14nm of thermal SiO2. This work strongly indicates that increasing the fraction of CNT-metal contacts can reduce the total thermal resistance below 1m2KMW−1.

Thermal conduction in GeSbTe films strongly influences the writing energy and time for phase change memory (PCM) technology. This study measures the thermal conductivity of Ge2Sb2Te5 between 25 and 340°C for layers with thicknesses near 60, 120, and 350nm. A strong thickness dependence of the thermal conductivity is attributed to a combination of thermal boundary resistance (TBR) and microstructural imperfections. Stoichiometric variations significantly alter the phase transition temperatures but do not strongly impact the thermal conductivity at a given temperature. This work makes progress on extracting the TBR for Ge2Sb2Te5 films, which is a critical unknown parameter for PCM simulations.

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Thermal conduction in periodic multilayer composites can be strongly influenced by nonequilibrium electron-phonon scattering for periods shorter than the relevant free paths. Here we argue that two additional mechanisms-quasiballistic phonon transport normal to the metal film and inelastic electron-interface scattering-can also impact conduction in metal/dielectric multilayers with a period below 10 nm. Measurements use the 3ω method with six different bridge widths down to 50 nm to extract the in- and cross-plane effective conductivities of Mo/Si (2.8 nm/4.1 nm) multilayers, yielding 15.4 and 1.2 W/mK, respectively. The cross-plane thermal resistance is lower than can be predicted considering volume and interface scattering but is consistent with a new model built around a film-normal length scale for phonon-electron energy conversion in the metal. We introduce a criterion for the transition from electron to phonon dominated heat conduction in metal films bounded by dielectrics.

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