Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

Panzer, Matthew A.; Shandalov, Michael; Rowlette, Jeremy; Oshima, Yasuhiro; Chen, Yi Wei; McIntyre, Paul C.; Goodson, Kenneth E.

doi:10.1109/led.2009.2032937

Cited by 156 publications

(78 citation statements)

References 24 publications

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“…This is consistent with the observations of Ritala where crystallites with a preferential orientation in the [100] direction was observed for ALD HfO 2 films. 181 However, we note that a more random orientation has been reported by others for thinner films 56,60 and a [111] orientation has been reported by Berdova for ALD HfO 2 films annealed at 700−900…”

Section: 290supporting

confidence: 75%

“…60,180,181 For the latter, we note that in some cases the degree of crystallinity in ALD HfO 2 has been observed to increase with thickness/number of growth cycles, 18,30,56 and that other tetragonal and orthorhombic crystalline phases have been reported. 180,181 Post-deposition annealing at 500-900…”

Section: N194mentioning

confidence: 76%

“…Furthermore, the HfO 2 results presented by Panzer offer the only other literature values for ITR at ALD deposited dielectric/silicon interfaces. 56 The values obtained for the interfaces in the previous work in the literature are dependent on the method used, assumptions made in the thermal model and property extraction, specimen quality, as well as the quality of the interface between the two materials. In this regard, the data presented here offer a consistent comparison of the interface between six dielectric materials, including the SiO 2 and a-SiN:H, with which to evaluate the relative difference in ITR for ALD dielectrics on the same substrate using the same procedure and testing method for ITR extraction.…”

Section: 283mentioning

confidence: 99%

“…44,45 For such devices, knowledge of properties such as Young's modulus and film stress are critical for predicting the flexure and resonance frequencies of bridged and cantilevered switches and sensors, [46][47][48][49] stretched transistor device performance, 50,51 buckling failures in nanopatterned structures, 52,53 and macroscale buckling and nanoscale wrinkling effects for stiff high-k films deposited on compliant polymeric substrates. 54,55 Unfortunately, only a limited number of studies have reported on the thermal [56][57][58][59] and mechanical 42,[60][61][62][63][64][65][66] properties of ALD highk dielectric materials, and the numerous reviews [2][3][4][5][6][7][8] of high-k dielectrics have focused primarily on the electronic structure and interfacial properties of high-k dielectrics from a CMOS device perspective. To the authors' knowledge, a clear correspondence between thermal/mechanical and electrical/optical properties for ALD high-k dielectrics has yet to be established.…”

mentioning

confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: 290supporting

confidence: 75%

Section: N194mentioning

confidence: 76%

Section: 283mentioning

confidence: 99%

mentioning

confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…The simulation results indicate significant enhancement of Joule heating in the bilayer structure. For these simulations, we used the measured electrical parameters of the layers, while the thermal parameters were obtained from the literature [28,[31][32][33][34][35]. …”

mentioning

confidence: 99%

A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

Hsieh

Roy

Chang

et al. 2016

Applied Physics Letters

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A memristor is a two-terminal 'memory resistor' electronic device, in which a metal oxide switching layer is sandwiched between two metal electrodes [1][2][3][4]. In general, memristors offer non-linear switching characteristics, and materials and process compatibility with advanced silicon manufacturing. These attributes have spurred the exploration of memristors as synaptic devices for realizing spike-based hardware learning systems that are capable of processing unstructured, temporal data [5][6][7][8][9][10]. However, for memristor-based technologies to be viable, the device should exhibit several key characteristics. It should have a compact nanoscale footprint, operate at a voltage close to 1V that is compatible with complementary metal oxide semiconductor (CMOS) technology, have reproducible electrical characteristics, and possess high switching speed to minimize the energy consumption [11]. Furthermore, the hardware integration of synaptic connections in advanced neural networks requires memristors with multiple resistive states [12,13]. These are challenging requirements and are difficult to implement without significant innovations.The phenomenological principle of memristor device operation is based on the change in the physical properties of a conductive filament (associated with the presence of oxygen vacancies) by applying an electric field across the metal oxide switching layer [14][15][16]. The resulting motion of the oxygen vacancies alters the device resistance between low (Set) and high (Reset) states, depending on the direction and the amplitude of the electric field. So far, a variety of structures from a large set of materials (various metal oxide switching layers and metal electrodes) have been studied in the literature [4,17,18]. Several key findings can be drawn from those studies regarding the performance, energy and scalability of this type of devices. The most important finding reveals the trade-off between the switching energy and the data retention time-that is often referred to as voltage-time dilemma [19]. This trade-off is associated with the energy barrier of the device structure. For example, devices made of metal oxides with small energy bandgap (E g ), such as titanium oxide (TiO x , E g~3 .4eV), generally exhibit low operating voltage and compromised data retention [20], while those with large bandgap, such as hafnium oxide (HfO x , E g~5 .4eV) demonstrate the opposite [21]. However, the fabrication of devices with bilayer switching stacks has shown to be effective in mitigating this trade-off. In particular, the improvement in data retention was obtained by the incorporation of an ultra-thin wide bandgap metal oxide capping layer (for example aluminum oxide) [22]. On the other hand, the addition of a reactive capping metal (for example titanium, hafnium, etc.) as an oxygen scavenging layer provided a pathway for reducing the operating voltage of the devices [23,24]. Despite significant advances, a sub-1V memristive device that simultaneously affords built-in analog behavior...

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A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

Palumbo

Wen

Lombardo

et al. 2019

Adv Funct Materials

140

104

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Thin dielectric films are essential components of most micro-and nanoelectronic devices, and they have played a key role in the huge development that the semiconductor industry has experienced during the last 50 years. Guaranteeing the reliability of thin dielectric films has become more challenging, in light of strong demand from the market for improved performance in electronic devices. The degradation and breakdown of thin dielectrics under normal device operation has an enormous technological importance and thus it is widely investigated in traditional dielectrics (e.g., SiO 2 , HfO 2 , and Al 2 O 3 ), and it should be further investigated in novel dielectric materials that might be used in future devices (e.g., layered dielectrics). Understanding not only the physical phenomena behind dielectric breakdown but also its statistics is crucial to ensure the reliability of modern and future electronic devices, and it can also be cleverly used for other applications, such as the fabrication of new-concept resistive switching devices (e.g., nonvolatile memories and electronic synapses). Here, the fundamentals of the dielectric breakdown phenomenon in traditional and future thin dielectrics are revised. The physical phenomena that trigger the onset, structural damage, breakdown statistics, device reliability, technological implications, and perspectives are described.

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Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

Cited by 156 publications

References 24 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

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