Thermal Boundary Resistance Measurements for Phase-Change Memory Devices

Reifenberg, John P.; Chang, Kuo‐Wei; Panzer, Matthew A.; Kim, Sang-Bum; Rowlette, Jeremy; Asheghi, Mehdi; Wong, H.-S. Philip; Goodson, Kenneth E.

doi:10.1109/led.2009.2035139

Cited by 109 publications

(75 citation statements)

References 21 publications

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“…HT TBR of ~ 26 m 2 K/GW for samples of GST between two layers of TiN [12]. This measurement, performed using picosecond time-domain thermoreflectance (TDTR), utilized samples with TiN thickness greater than 10 nm.…”

Section: Resultsmentioning

confidence: 99%

“…Studies on the TBR between GST and electrode materials show data that exceed these estimates [12], implying that interfacial effects dominate over acoustic mismatch.…”

Section: Previous Workmentioning

confidence: 97%

“…The thermal conductivities of the stacks are extracted using a least squares fit of a solution of the three dimensional radiallysymmetric heat diffusion equation for a multi-layered stack in response to a 6 ns surface heating pulse [20], [12]. Ambient temperature for the fit is 30 o C. Small changes in ambient temperature do not affect the fitting results because the thermal properties of the samples are not strong functions of temperature.…”

Section: Data Fittingmentioning

confidence: 99%

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Thermal conductivity and boundary resistance measurements of GeSbTe and electrode materials using nanosecond thermoreflectance

Bozorg-Grayeli

Reifenberg

Chang

et al. 2010

2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

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Phase change memory (PCM) uses rapid heating and cooling to induce switching in sub-micron memory cells. The rapid rates of heating and nanoscale dimensions require accurate modeling of thermal transport phenomena in the constituent materials. This motivates improved understanding of the thermal properties of Ge 2 Sb 2 Te 5 (GST) thin films and PCM electrode materials. We report measurements of thermal conductivity and interface resistance of GST and electrode materials by applying nanosecond pump-probe thermoreflectance to multilayer structures of GST-C, GSTTiN, and GST-Ti. We measure the total thermal resistance of the stack from the transient thermal response, separating the intrinsic and boundary resistance terms using a 1-D resistor model of the stack. The intrinsic conductivities for GST are 0.20 W/(m K) for GST-C, 0.33 W/(m K) for GST-TiN, 0.27 W/(m K) for low temperature deposited GST-Ti, and 0.69 for high temperature deposited GST-Ti. The thermal boundary resistances are 27.5 m 2 K/GW for GST-C, 5.2 m 2 K/GW for GST-TiN, 49.8 m 2 K/GW for low temperature GST-Ti, and 11.4 m 2 K/GW for high temperature GST-Ti.

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Section: Resultsmentioning

confidence: 99%

“…Studies on the TBR between GST and electrode materials show data that exceed these estimates [12], implying that interfacial effects dominate over acoustic mismatch.…”

Section: Previous Workmentioning

confidence: 97%

Section: Data Fittingmentioning

confidence: 99%

See 1 more Smart Citation

Thermal conductivity and boundary resistance measurements of GeSbTe and electrode materials using nanosecond thermoreflectance

Bozorg-Grayeli

Reifenberg

Chang

et al. 2010

2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

Self Cite

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“…55 In contrast to electrical contact resistance, the thermal boundary resistance between GST media and di®erent electrode materials have been experimentally established. [56][57][58][59] …”

Section: Interfacial Resistance Modelingmentioning

confidence: 99%

The Route for Ultra-High Recording Density Using Probe-Based Data Storage Device

Wang

Wen

Yang

et al. 2015

NANO

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Phase-change probe memory using Ge 2 Sb 2 Te 5 has been considered as one of the promising candidates as next-generation data storage device due to its ultra-high density, low energy consumption, short access time and long retention time. In order to utmostly mimic the practical setup, and thus fully explore the potential of phase-change probe memory for 10 Tbit/in 2 target, some advanced modeling techniques that include threshold-switching, electrical contact resistance, thermal boundary resistance and crystal nucleation-growth, are introduced into the already-established electrothermal model to simulate the write and read performance of phasechange probe memory using an optimal media stack design. The resulting predictions clearly demonstrate the capability of phase-change probe memory to record 10 Tbit/in 2 density under pico Joule energy within micro second period.

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“…The R TBR properties have been widely discussed in the researches regarding of the thermal properties of thin films based on various electric methods 34,35 and optical methods. 36,37 However, the measurement of R TBR based on the Fourier's law of heat conduction at steady-state is rarely reported. With the knowledge of κ and R TBR values obtained by this study, the thermal conductance of flip-chip samples containing various solder joint arrays were calculated and their correlations with the thermal conduction of underfills and R TBR properties are discussed.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the thermal conductance of flip-chip bonding structure utilizing the measurement based on Fourier’s law of heat conduction at steady-state

Huang

et al. 2018

AIP Advances

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Fourier’s law of heat conduction at steady-state was adopted to establish a measurement method utilizing platinum (Pt) thin-film electrodes as the heater and the temperature sensor. The thermal conductivities (κ’s) of Pyrex glass, an epoxy resin and a commercial underfill for flip-chip devices were measured and a good agreement with previously reported values was obtained. The thermal boundary resistances (RTBR’s) of Pt/sample interfaces were also extracted for discussing their influence on the thermal conduction of samples. Afterward, the flip-chip samples with 2×2 solder joint array utilizing Si wafers as the die and the substrate, without and with the underfills, were prepared and their thermal conductance were measured. For the sample without underfill, the air presenting in the gap of die and the substrate led to the poor thermal conductance of sample. With the insertion of underfills, the thermal conductance of flip-chip samples improved. The resistance to heat transfer across Si/underfill interfaces was also suppressed and to promote the thermal conductance of samples. The thermal properties of underfill and RTBR at Si/underfill interface were further implanted in the calculation of thermal conductance of flip-chip samples containing various solder joint arrays. The increasing number of solder joints diminished the influence of thermal conduction of underfill and RTBR of Si/underfill interface on the thermal conductance of samples. The insertion of underfill with high-κ value might promote the heat conductance of samples containing low-density solder joint arrays; however, it became insignificant in improving the heat conductance of samples containing high-density solder joint arrays.

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Thermal Boundary Resistance Measurements for Phase-Change Memory Devices

Cited by 109 publications

References 21 publications

Thermal conductivity and boundary resistance measurements of GeSbTe and electrode materials using nanosecond thermoreflectance

Thermal conductivity and boundary resistance measurements of GeSbTe and electrode materials using nanosecond thermoreflectance

The Route for Ultra-High Recording Density Using Probe-Based Data Storage Device

Evaluation of the thermal conductance of flip-chip bonding structure utilizing the measurement based on Fourier’s law of heat conduction at steady-state

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