Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films

Reifenberg, John P.; Panzer, Matthew A.; Kim, Sang-Bum; Gibby, Aaron; Zhang, Yuan; Wong, S.S.; Wong, H.-S. Philip; Pop, Eric; Goodson, Kenneth E.

doi:10.1063/1.2784169

Cited by 114 publications

(88 citation statements)

References 17 publications

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“…According to literature [21,22], thermal conductivity of the capping layer that determines the conductive path of joule heating also plays a critical role in determining the maximum/minimum temperature inside the active layer, thus requiring particular attention. Hence, the maximum/minimum temperature at points A–D is reevaluated by changing the thermal conductivity of the ITO layer (i.e.…”

Section: Resultsmentioning

confidence: 99%

Potential of ITO thin film for electrical probe memory applications

Wang

Wen

Yang

et al. 2018

Science and Technology of Advanced Materials

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Electrical probe memory has received considerable attention during the last decade due to its prospective potential for the future mass storage device. However, the electrical probe device with conventional diamond-like carbon capping and bottom layers encounters with large interfacial contact resistance and difficulty to match the experimentally measured properties, while its analog with titanium nitride capping and bottom layers also faces serious heat dissipation through either probe and silicon substrate. Therefore, the feasibility of using indium tin oxide (ITO) media for the capping and bottom layers of the electrical probe device is investigated by tailoring the thickness and electrothermal properties of the ITO capping and bottom layers within experimentally established range and subsequently calculating the resultant temperature at several predefined points based on a previously developed three-dimensional model. To meet the required temperature and to fit the experimentally reported values, the thickness, electrical conductivity, and thermal conductivity of the ITO capping and bottom layers are found to be 5 nm, 103 Ω−1 m−1, 0.84 W m−1 K−1, and 200 nm, 1.25 × 106 Ω−1 m−1, 0.84 W m−1 K−1, respectively. The practicality of using this optimized device to achieve ultrahigh density, ultralow energy consumption, ultrafast switching speed, low interfacial contact resistance, and high thermal reliability has also been demonstrated.

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Section: Resultsmentioning

confidence: 99%

Potential of ITO thin film for electrical probe memory applications

Wang

Wen

Yang

et al. 2018

Science and Technology of Advanced Materials

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“…The intrinsic conductivity of GST for the (GST-Ti) HT sample is 0.69 W/(m K), higher than the results reported for the FCC phase. This suggests that partial HCP crystallization may be occurring [13], [14].…”

Section: Resultsmentioning

confidence: 99%

“…Yang et al and Reifenberg et al measured the dependence of thermal conductivity on the stoichiometry and thickness of GST, determining that concentration of Te and film height can drastically change the thermal properties of the material [13], [14]. Lyeo et al measured the conductivity of GST with Time Domain Thermoreflectance Thermometry [15], yielding ~0.19 W/(m K) for a-GST, ~0.57 W/(m K) for c-GST, and ~1.58 W/(m K) for h-GST.…”

Section: Previous Workmentioning

confidence: 99%

Thermal conductivity and boundary resistance measurements of GeSbTe and electrode materials using nanosecond thermoreflectance

Bozorg-Grayeli

Reifenberg

Chang

et al. 2010

2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

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Phase change memory (PCM) uses rapid heating and cooling to induce switching in sub-micron memory cells. The rapid rates of heating and nanoscale dimensions require accurate modeling of thermal transport phenomena in the constituent materials. This motivates improved understanding of the thermal properties of Ge 2 Sb 2 Te 5 (GST) thin films and PCM electrode materials. We report measurements of thermal conductivity and interface resistance of GST and electrode materials by applying nanosecond pump-probe thermoreflectance to multilayer structures of GST-C, GSTTiN, and GST-Ti. We measure the total thermal resistance of the stack from the transient thermal response, separating the intrinsic and boundary resistance terms using a 1-D resistor model of the stack. The intrinsic conductivities for GST are 0.20 W/(m K) for GST-C, 0.33 W/(m K) for GST-TiN, 0.27 W/(m K) for low temperature deposited GST-Ti, and 0.69 for high temperature deposited GST-Ti. The thermal boundary resistances are 27.5 m 2 K/GW for GST-C, 5.2 m 2 K/GW for GST-TiN, 49.8 m 2 K/GW for low temperature GST-Ti, and 11.4 m 2 K/GW for high temperature GST-Ti.

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“…Experiments have shown [44][45][46] ), so adding TBR simply makes it a slightly poorer thermal conductor.…”

Section: Discussionmentioning

confidence: 99%

The Design of Rewritable Ultrahigh Density Scanning-Probe Phase-Change Memories

Wright

Wang

Shah

et al. 2011

IEEE Trans. Nanotechnology

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Abstract-A systematic design of practicable media suitable for re-writeable, ultra-high density (> 1Tbit/sq.in.), high data rate (> 1Mbit/s/tip) scanning probe phase-change memories is presented. The basic design requirements were met by a Si/TiN/GST/DLC structure, with properly tailored electrical and thermal conductivities. Various alternatives for providing re-writeability were investigated. In the first case amorphous marks were written into a crystalline starting phase and subsequently erased by re-crystallization, as in other already-established phasechange memory technologies. Results imply that this approach is also appropriate for probe-based memories. However, experimentally the successful writing of amorphous bits using scanning electrical probes has not been widely reported. In light of this a second approach has been studied, that of writing crystalline bits in an amorphous starting matrix, with subsequent erasure by re-amorphization. With conventional phase-change materials, such as continuous films of Ge 2 Sb 2 Te 5 , this approach invariably leads to the formation of a crystalline 'halo' surrounding the erased (re-amorphized) region, with severe adverse consequences on the achievable density. Suppression of the 'halo' was achieved using patterned media or slow-growth phase-change media, with the latter seemingly more viable.

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Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films

Cited by 114 publications

References 17 publications

Potential of ITO thin film for electrical probe memory applications

Potential of ITO thin film for electrical probe memory applications

Thermal conductivity and boundary resistance measurements of GeSbTe and electrode materials using nanosecond thermoreflectance

The Design of Rewritable Ultrahigh Density Scanning-Probe Phase-Change Memories

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