Laser lift-off of GaN from sapphire substrates has become a viable technique to increase the brightness of GaN-based light-emitting diodes (LEDs). The LEDs free from sapphire exhibit high luminous efficiency by placing highly reflective electrode on the back side. The devices serve low series resistance together with low thermal resistance taking advantages of the vertical structure. Thinner epitaxial structure is desired to serve better device performance, however, cracks in the film after the lift-off limits the minimum thickness. In this paper, successful laser lift-off of very thin GaN with the thickness down to 4 µm is described. The established laser lift-off system utilizes homogenized beam-profile of the employed neodymium-doped yttrium aluminium garnet (Nd:YAG) third harmonic laser in which optimization of the laser fluence minimizes the thickness of the decomposed GaN. It is also revealed by calculation that the compressive stress in the thin GaN is increased by reducing the thickness. It is demonstrated that the lattice of the GaN is relaxed after the laser lift-off, which is confirmed by photoluminescence (PL) and X-ray diffraction (XRD) measurements. In addition, reduction of the wafer bowing of GaN on sapphire is experimentally confirmed after the laser irradiation with the formation of metal Ga in between the interface.

Group-III (B, Al, Ga, and In)-nitride quaternary alloys and group-III (Al, Ga, and In)-nitride-based mixed anion (As, P, and Sb) quaternary alloys are useful for blue and green light emitting devices and high-temperature, high-power, and high-frequency electronic devices. It is known that these alloys are very difficult to grow in certain compositional regions. The thermodynamical stability of these alloys is studied with respect to an unstable two-phase region in the phase field. The unstable two-phase region is predicted based on a strictly regular solution model. The interaction parameter used in our model is obtained analytically using the valence force field (VFF) model modified for wurtzite structures. The calculated interaction parameters, which are required to predict the unstable two-phase region, agree well with experimental results for related alloy systems. The modified VFF model can also be used to predict the microscopic crystal structure, such as first neighbor anion–cation bond lengths. In order to verify our calculations, we compare the calculated and experimental results for the first neighbor anion–cation bond lengths in the InGaN system. The calculated results agree well with the experimental results. From our calculation results, the unstable two-phase regions for four A1−x−yBxCyD type group-III-nitride quaternary alloys and nine A1−xBxC1−yDy type group-III-nitride mixed anion quaternary alloys are calculated. The predicted unstable two-phase regions agree well with experimentally observed regions of phase separation in ternary alloys, which suggests our model calculations can provide useful guidance in ternary and quaternary systems where there is no experimental data.

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We have integrated the surface photonic crystal (PhC) on GaN-based blue light-emitting diodes (LEDs) for the first time in order to enhance the extraction efficiency of the LEDs. With the finite-difference time-domain method, we have calculated 3.6-fold enhancement in light output. The theoretical calculations have revealed that the optimum pitch of the PhC is much longer than the emission wavelength when the distance between the PhC and the active layer of LEDs is short. This design enables PhC formation on chemically stable GaN surfaces. In addition, an indium tin oxide (ITO)-based transparent electrode is formed directly on the surface of PhC to realize light emission from the whole area of the LED. The fabricated PhCs have increased the light output of blue LEDs by 1.5 times compared with the LEDs without PhC. We have demonstrated that PhC will realize highly efficient solid-state lighting with GaN-based LEDs.

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A model to predict material characteristics of the InGaN ternary system, which is useful for blue and green light emitting and laser diodes, with respect to an unstable two-phase region in the phase field and the first neighbor anion–cation bond length is developed. The unstable region is analyzed using a strictly regular solution model. The interaction parameter used in the analysis is obtained from a strain energy calculation using the valence force field (VFF) model, modified for both wurtzite and zinc-blende structures to avoid overestimation of the strain energy. The structural deviation from an ideal wurtzite structure in GaN and InN is also taken into account in our model. The critical temperatures found in our analysis for wurtzite InGaN and zinc-blende InGaN are 1967 and 1668 K, respectively. This suggests that, at typical growth temperatures around 800 °C, a wide unstable two-phase region exists in both wurtzite and zinc-blende structures. The modified VFF model can also predict the microscopic crystal structure, such as first neighbor anion–cation bond lengths. In order to validate our calculation results for zinc-blende structures, we compare the calculated and the experimental results in terms of the interaction parameter and the first neighbor anion–cation bond lengths in the InGaAs system. For the wurtzite structure, we compare the calculated and the experimental results for the first neighbor anion–cation bond lengths in the InGaN system. The calculated results agree well with the experimental results.

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