Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model

Takayama, Toru; Yuri, Masaaki; Itoh, Kunio; Baba, T.; Harris, James S.

doi:10.1016/s0022-0248(00)00869-1

Cited by 64 publications

(37 citation statements)

References 18 publications

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“…Aumer et al (1999) reported that a narrow window around 855°C is suitable for InAlGaN layers for the best optical efficiency. Moreover, quaternary alloys may undergo immiscibility and phase separation (Takayama et al, 2001;Purton et al, 2007) which is strongly dependent on the growth parameters such as temperature (Sadler et al, 2009), pressure (Kim-Chauveau et al, 2011, precursor flux (Sadler et al, 2011) and even thickness (Chen et al, 2012) leading to the formation of hillocks, pinholes, cracks, and indium droplets etc. In addition, growth kinetics around TDs and IDs originating in the GaN buffer template may lead to similar degradations.…”

Section: Introductionmentioning

confidence: 99%

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Ammar

Minj

Chauvat

et al. 2017

Journal of Microscopy

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SummaryDefects in quaternary InAlGaN barriers and their effects on crystalline quality and surface morphology have been studied. In addition to growth conditions, the quality of the GaN template may play an important role in the formation of defects in the barrier. Therefore, this work is focused on effects caused by threading dislocations (TDs) and inversion domains (IDs) originating from the underlying GaN. The effects are observed on the crystalline quality of the barrier and characteristic surface morphologies. Each type of TDs is shown to affect the surface morphology in a different way. Depending on the size of the corresponding hillock for a given pinhole, it was possible to determine the dislocation type. It is pointed out that the smallest pinholes are not connected to TDs whereas the large ones terminate either mixed type or edge type TDs. At sufficiently large layer thickness, the IDs originating from the GaN template lead to the formation of concentric trenches at the layer surface, and this is related to the change in growth kinetics on top and at the immediate surroundings of the ID.

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Section: Introductionmentioning

confidence: 99%

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Ammar

Minj

Chauvat

et al. 2017

Journal of Microscopy

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“…Boron nitride (BN) is a very good choice for protective coatings due to its hardness, high melting point and large bulk modulus for the cubic variety [8]. BN, on the other hand, has features of high thermal conductivity suitable for applications in electronic devices [9].…”

Section: Introductionmentioning

confidence: 99%

First-Principles Investigation of Structural and Electronic Properties of the B_xGa_1-xN, B_xAl_1-xN, Al_xGa_1-xN and B_xAl_yGa_1-x-yN Compounds

Djoudi

Lachebi²,

Merabet³

et al. 2012

Acta Phys. Pol. A

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The structural and electronic properties of the BxGa1−xN, BxAl1−xN, AlxGa1−xN and BxAlyGa1−x−yN compounds were studied using the full-potential linearized augmented plane wave method, within the generalized gradient approximation. We have compared the Al and B compositions dependence on the ground state properties: lattice parameters, bulk moduli and their pressure derivative, and band gap energies. The lattice parameters are found to change linearly for AlxGa1−xN, exhibit a downward bowing for both BxAl1−xN and BxGa1−xN, and has a very small deviation when Al is added and a large deviation when B is incorporated for BxAlyGa1−x−yN. The calculated band gap variation for the ternaries shows that the BxGa1−xN has a phase transition from direct-gap to indirect-gap for high boron contents (x > 0.75). As for BxAl1−xN, a direct-gap is found in the boron content range 0.07 < x < 0.83. For AlxGa1−xN and BxAlyGa1−x−yN compounds, they have been found to be direct-gap materials. The results show that the BxGa1−xN, BxAl1−xN, AlxGa1−xN and BxAlyGa1−x−yN materials may well be useful for optoelectronic applications.

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“…Interaction parameter Ω as a function of composition x of Zn 1−x Cd x O ternary alloy was provided by valence force eld (VFF) method [19,20] using modied Keating's potential (for non-ideal wurtzite) [21]. This parameter contains chemical contribution due to charge transfer and formation of bonds.…”

Section: Theoretical Approachmentioning

confidence: 99%

Phase Field Modeling of the Zn_1-xCd_{_x}O Solid Solutions

2014

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The analysis of spinodal decomposition in the Zn1−xCdxO ternary alloy was carried out by means of the nonlinear CahnHilliard equation. Interaction parameter as a function of composition x was provided by valence force eld simulations and was used in this analysis. The morphological patterns for the ternary alloys with dierent Cd content (x = 5, 10, 50%) were experimentally obtained using the semi-implicit Fourier-spectral method.The simulated microstructure evolution Zn0.95Cd0.05O demonstrates that the microstructure having a form of bicontinuous worm-like network is evolved with the progress of aging. An eect of the phase-eld mobility and the gradient energy on the microstructure evolution of the Zn1−xCdxO alloys is discussed. It was found that the higher driving force for the decomposition in the higher Cd content lm results in a higher decomposition rate revealed by the simulations. The temporal evolution of the simulated Zn0.95Cd0.05O microstructure is in good agreement with experimental results, which have been obtained for this solid solution.

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Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model

Cited by 64 publications

References 18 publications

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

First-Principles Investigation of Structural and Electronic Properties of the B_xGa_1-xN, B_xAl_1-xN, Al_xGa_1-xN and B_xAl_yGa_1-x-yN Compounds

Phase Field Modeling of the Zn_1-xCd_{_x}O Solid Solutions

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Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model

Cited by 64 publications

References 18 publications

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

First-Principles Investigation of Structural and Electronic Properties of the BxGa1-xN, BxAl1-xN, AlxGa1-xN and BxAlyGa1-x-yN Compounds

Phase Field Modeling of the Zn1-xCd_xO Solid Solutions

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Product

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About

First-Principles Investigation of Structural and Electronic Properties of the B_xGa_1-xN, B_xAl_1-xN, Al_xGa_1-xN and B_xAl_yGa_1-x-yN Compounds

Phase Field Modeling of the Zn_1-xCd_{_x}O Solid Solutions