We report the low-temperature (250°C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current-voltage measurements showed a typical rectifying characteristic of a p-n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.
X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the Zn1−xCdxO semiconductor systems obtained at the dierent growth conditions. The eect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the Zn1−xCdxO lms was investigated and discussed. Behavior of the mX-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/O2 gas ratio and dc power.
Abstract:For the first time, we present a novel method of explosive evaporation (MEE) for the deposition of ZnO nanostructures using concentrated solar radiation for precursor evaporation. Zinc acetylacetonate powder and a mixture of ZnO with graphite powders are used as precursors for the deposition of ZnO nanostructures. ZnO nanostructures are deposited on Au/Si, Ag/Si, and unpolished Si substrates by MEE. The scanning electron microscopy, energy dispersive X-ray analysis, X-ray diffraction, Raman scattering, photoluminescence, and Fourier transformed infrared spectroscopy are used for sample characterization. We demonstrate that the changing of precursors and the substrate types allows ZnO nanostructures to be grown with diverse morphologies: hexagons, spheres, and needles. The properties of ZnO nanostructures deposited on unpolished, coated by Ag and Au silicon substrates are discussed. MME using concentrated solar radiation is promising method for applications in the semiconductor industry as an economically efficient environmentally-friendly method for the growth of nanostructures.
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